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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.最新文献

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A new drain voltage enhanced NBTI degradation mechanism [pMOSFETs] 一种新的漏极电压增强NBTI降解机制[pmosfet]
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493140
N. K. Jha, P. Reddy, V. Rao
{"title":"A new drain voltage enhanced NBTI degradation mechanism [pMOSFETs]","authors":"N. K. Jha, P. Reddy, V. Rao","doi":"10.1109/RELPHY.2005.1493140","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493140","url":null,"abstract":"Interface state generation and threshold voltage degradation for various channel length devices, stressed at different drain bias conditions, has been studied. It is found that the NBTI (negative bias temperature instability) effect decreases at low drain bias due to decrease in effective gate bias near the drain edge. The subsequent increase in degradation at higher drain stress bias is due to non-uniform generation of interface states and subsequent diffusion of generated hydrogen species along the length of the channel. This effect is more pronounced for short channel devices stressed at high temperatures and high drain bias.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127542097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Trap generation and progressive wearout in thin HfSiON 薄HfSiON的陷阱产生和逐渐磨损
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493060
T. Kauerauf, R. Degraeve, F. Crupi, B. Kaczer, G. Groesencken, H. Maes
{"title":"Trap generation and progressive wearout in thin HfSiON","authors":"T. Kauerauf, R. Degraeve, F. Crupi, B. Kaczer, G. Groesencken, H. Maes","doi":"10.1109/RELPHY.2005.1493060","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493060","url":null,"abstract":"The degradation and time-to-breakdown characteristics of thin (1.38 to 2.14 nm EOT) MOCVD HfSiON dielectrics with poly-Si gate were studied. We demonstrate that at elevated temperature the conduction mechanism remains direct tunneling and that for EOT below 1.5 nm charge trapping is no reliability issue. It is shown that similar to the case of SiON dielectrics, the degradation process is dominated by the formation of single localized conductions paths and that the total time-to-failure consists of two parts: the time-to-creation of a conductive path and the time until the wearout of this path has reached a critical threshold. The degradation rate of the progressive wearout is strongly voltage dependent. For thin (1.38 nm EOT) HfSiON we demonstrate that the time-to-creation even at operating condition is very small, but the overall TDDB reliability is guaranteed because of the large time-to-wearout.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124973710","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
Failure analysis of pixel shorting problems in polymer light emitting diode (PLED) displays 聚合物发光二极管(PLED)显示器像素短化问题失效分析
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493171
L. Wu, A. Johnson, D. Kolosov, I. Parker, J. Trujillo
{"title":"Failure analysis of pixel shorting problems in polymer light emitting diode (PLED) displays","authors":"L. Wu, A. Johnson, D. Kolosov, I. Parker, J. Trujillo","doi":"10.1109/RELPHY.2005.1493171","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493171","url":null,"abstract":"A failure analysis process, combining electrical characterization, optical microscopy, SEM/FIB, and other analytical methods, to identify the root cause of pixel shorts in polymer light emitting diode (PLED) displays is presented. Shorted pixels appear black on a full-on white screen, influencing the display uniformity; they could also cause driver problems by drawing excess current. Pixel shorting also poses a reliability problem, since it can occur after burn-in, during the lifetime of the display. The paper discusses the FA process and identified failure mechanisms.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116734532","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Reliability investigation upon 30 nm gate length ultra-high aspect ratio FinFETs 30 nm栅长超高宽高比finfet的可靠性研究
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493144
W. Liao, Shiao-Shien Chen, S. Chiang, W. Shiau
{"title":"Reliability investigation upon 30 nm gate length ultra-high aspect ratio FinFETs","authors":"W. Liao, Shiao-Shien Chen, S. Chiang, W. Shiau","doi":"10.1109/RELPHY.2005.1493144","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493144","url":null,"abstract":"3D vertical double gate (FinFET) devices with an ultra-high aspect ratio (Si-fin height/width=H/W>7) and gate nitrided oxide (N/O) of 14/spl Aring/ have been successfully developed. This paper details reliability characterizations, including V/sub bd/, Q/sub bd/, NMOS HCI (hot carrier injection) DC and AC lifetimes as well as PMOS NBTI (negative bias temperature instability) lifetimes, which indicate robust properties for future industrial applications.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"85 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121078425","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 4
New ballasting method for MOS output drivers and power bus clamps MOS输出驱动器和母线钳的新型镇流器
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493128
E. Worley
{"title":"New ballasting method for MOS output drivers and power bus clamps","authors":"E. Worley","doi":"10.1109/RELPHY.2005.1493128","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493128","url":null,"abstract":"New layout styles for MOSFET output drivers and power bus ESD clamps are shown, which provide ballasting with reduced layout area and drain capacitance than the traditional method of using a salicide, blocked drain resistor. Also, an N well ring is placed inside the P+ substrate tie ring of an NFET to increase channel to substrate resistance and improve snap-back conduction uniformity.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"49 16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122746587","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 14
Hot carrier reliability in GaAs PHEMT MMIC power amplifiers GaAs PHEMT MMIC功率放大器的热载流子可靠性
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493157
Y. Chou, R. Grundbacher, R. Lai, G. Li, Q. Kan, M. Yu, L. Callejo, D. Leung, D. Eng, T. Block, A. Oki
{"title":"Hot carrier reliability in GaAs PHEMT MMIC power amplifiers","authors":"Y. Chou, R. Grundbacher, R. Lai, G. Li, Q. Kan, M. Yu, L. Callejo, D. Leung, D. Eng, T. Block, A. Oki","doi":"10.1109/RELPHY.2005.1493157","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493157","url":null,"abstract":"The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionization on devices under RF-drive. Furthermore, the degradations of drain current (I/sub ds/), transconductance (G/sub m/), and output power (P/sub out/) exhibit a similar dependence on gate current (I/sub g/) induced by RF-drive lifetest. Additionally, using the results of a long-term lifetest (up to 6,000 hours), an empirical model for hot carrier reliability was developed to predict the long-term power performance of 0.15 /spl mu/m GaAs MMIC power amplifiers.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"115 22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126379048","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide [MOSFETs] 1.2nm超薄氧化mosfet中NBTI寿命模型的新发现及NBTI降解特性研究
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493214
C. Chen, Y.M. Lin, C. Wang, K. Wu
{"title":"A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide [MOSFETs]","authors":"C. Chen, Y.M. Lin, C. Wang, K. Wu","doi":"10.1109/RELPHY.2005.1493214","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493214","url":null,"abstract":"A new finding on 1.2 nm NBTI lifetime is proposed as an E-model for the low field region (<10 MV/cm) and a power law model for the high field region (>10 MV/cm). The NBTI lifetime stressed in the low field (<10 MV/cm) and extrapolated by the E-model is a better choice for 1.2 nm NBTI lifetime prediction. The NBTI degradation characteristics, accelerated degradation factors and lifetime prediction model for this 1.2 nm ultra thin oxide are systematically investigated. The mechanism of NBTI degradation on 1.2 nm ultra thin oxide is explained as the hydrogen diffusion model which supports the non-saturated degradation behavior and lifetime prediction model.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"84 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126212599","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 31
Porosity content dependence of TDDB lifetime and flat band voltage shift by Cu diffusion in porous spin-on low-k 低钾自旋多孔介质中Cu扩散对TDDB寿命与平带电压漂移的影响
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493131
Sang-Soo Hwang, Hee-Chan Lee, H. Ro, D. Y. Yoon, Young‐Chang Joo
{"title":"Porosity content dependence of TDDB lifetime and flat band voltage shift by Cu diffusion in porous spin-on low-k","authors":"Sang-Soo Hwang, Hee-Chan Lee, H. Ro, D. Y. Yoon, Young‐Chang Joo","doi":"10.1109/RELPHY.2005.1493131","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493131","url":null,"abstract":"The porosity dependence of Cu diffusion into the spin-on low-k dielectric having the same matrix with various porogen contents was studied using time dependent dielectric breakdown (TDDB) and capacitance voltage (C-V) measurements. Abrupt changes of the time to dielectric breakdown and the flat-band-voltage shift were observed when the porosity of the low-k was between 20% and 30%. Such a characteristic agrees with positronium annihilation lifetime spectroscopy (PALS) data, which indicates that the interconnectability of the pores abruptly increased for porosity between 20 and 30%. All the results suggest that the interconnection of pores in the low-k dramatically reduces the reliability of interconnects. The activation energy of Cu diffusion in the spin-on low-k dielectric without porosity was calculated to be 1.51 eV.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125245858","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Negative bias temperature instability(NBTI) of bulk FinFETs 块体finfet负偏置温度不稳定性(NBTI)
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493143
Sang-Yun Kim, T. Park, Jae-Sung Lee, Donggun Park, Kinam Kim, Jongho Lee
{"title":"Negative bias temperature instability(NBTI) of bulk FinFETs","authors":"Sang-Yun Kim, T. Park, Jae-Sung Lee, Donggun Park, Kinam Kim, Jongho Lee","doi":"10.1109/RELPHY.2005.1493143","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493143","url":null,"abstract":"We investigated the negative bias temperature instability (NBTI) of bulk FinFETs for the first time. Since the bulk FinFET has a body terminal, it is more flexible in studying the NBTI characteristics than the SOI FinFET (no body terminal). The dependence of NBTI on the back bias is smaller in a 100 nm bulk FinFET with a fin width of 30 nm than in conventional planar channel devices. The bulk FinFET with a side surface orientation of (100) showed better NBTI than the device with an orientation of [110]. The fin width was shown to have little impact on NBTI in the bulk FinFET. Moreover, the device with longer channel showed less degradation.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"111 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132902948","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 7
Electron trapping and interface trap generation in drain extended PMOS transistors 漏极扩展PMOS晶体管中的电子捕获和界面捕获
2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493147
P. Moens, F. Bauwens, M. Nelson, M. Tack
{"title":"Electron trapping and interface trap generation in drain extended PMOS transistors","authors":"P. Moens, F. Bauwens, M. Nelson, M. Tack","doi":"10.1109/RELPHY.2005.1493147","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493147","url":null,"abstract":"The hot carrier behavior of a p-type lateral drain extended MOS (DeMOS) is for the first time investigated using charge pumping (CP). In an early stage of hot carrier stress, electron injection and trapping occurs. With increasing stress time, the interface trap formation in the spacer oxide becomes the dominant mechanism. In this way, the abnormal degradation of the specific on-resistance Ron is explained.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133100535","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 37
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