Reliability investigation upon 30 nm gate length ultra-high aspect ratio FinFETs

Abstract

3D vertical double gate (FinFET) devices with an ultra-high aspect ratio (Si-fin height/width=H/W>7) and gate nitrided oxide (N/O) of 14/spl Aring/ have been successfully developed. This paper details reliability characterizations, including V/sub bd/, Q/sub bd/, NMOS HCI (hot carrier injection) DC and AC lifetimes as well as PMOS NBTI (negative bias temperature instability) lifetimes, which indicate robust properties for future industrial applications.