2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.最新文献

2005 IRPS Tutorial program 2005年IRPS教程计划

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2008-07-09 DOI: 10.1109/RELPHY.2008.4559022

Yuan Chen

引用次数: 3

V/sub ox//E/sub ox/-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode p+栅极- pmosfet中超薄SiON栅极介电介质在低应力电压下的V/sub - ox//E/sub - ox驱动击穿

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493114

S. Tsujikawa, K. Shiga, H. Umeda, Y. Akamatsu, J. Yugami, Y. Ohno, M. Yoneda

{"title":"V/sub ox//E/sub ox/-driven breakdown of ultra-thin SiON gate dielectric in p+gate-pMOSFET under low stress voltage of inversion mode","authors":"S. Tsujikawa, K. Shiga, H. Umeda, Y. Akamatsu, J. Yugami, Y. Ohno, M. Yoneda","doi":"10.1109/RELPHY.2005.1493114","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493114","url":null,"abstract":"We have studied the breakdown mechanism of ultra-thin SiON gate dielectrics in p+gate-pMOSFETs. A systematic study with varying gate doping concentrations has revealed that, in the case of p+gate-pMOSFETs in inversion mode, gate dielectric breakdown under low stress voltage is driven by oxide voltage (V/sub ox/) or oxide field (E/sub ox/), while the breakdown under higher stress voltage is driven by gate voltage (V/sub g/). The V/sub ox//E/sub ox/-driven breakdown which emerges under low stress voltage is quite important to the reliability of low-voltage CMOS. By studying the mechanism of the breakdown, it has been clarified that the breakdown is not induced by electron current. The concept that the breakdown is due to the same mechanism as NBTI, namely the interfacial hydrogen release driven by E/sub ox/, has been shown to be possible. However, direct tunneling of holes driven by V/sub ox/ has also been found to be a possible driving force of the breakdown. Although a decisive conclusion concerning the mechanism issue has not yet been obtained, the key factor that governs the breakdown has been shown to be V/sub ox/ or E/sub ox/.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116776052","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 4

Physical mechanism of high resistance of tungsten plug as a root cause of low yield and reliability issue in deep-sub-micron Si technology 钨塞高电阻的物理机理是深亚微米硅工艺低成品率和可靠性问题的根源

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493172

W. Zhang, K. T. Tan

{"title":"Physical mechanism of high resistance of tungsten plug as a root cause of low yield and reliability issue in deep-sub-micron Si technology","authors":"W. Zhang, K. T. Tan","doi":"10.1109/RELPHY.2005.1493172","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493172","url":null,"abstract":"In current ULSI devices, interconnects serve an important role in enabling multilayer design and fabrication. Tungsten (W) plug processing is a common solution. The W plug resistance is critical to maintain circuit performance and reliability. Abnormal resistance can cause voltage drop and capacitance increase, which, in turn, results in longer signal propagation delay that leads to an undesirable outcome. It becomes worse with increasing interconnection complexity and operating frequency. The high via resistance failure mechanism was investigated and the impact of via etching and post-etch treatment processes were analyzed. Experimental results suggest that via etching introduces a fluorine-containing polymer residue at the via bottom. Both the polymer residue and its reaction product, AlF/sub 3/, could result in a high resistance connection. The subsequent post-etch cleaning is quite critical to assure low resistance interconnections. By optimizing the etching condition and adding lamp de-gas and vacuum bake, the accumulation of F at the via bottom was reduced and via performance was improved.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"67 10","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120942732","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 0

A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation 基于广义二极管方程的MOS器件击穿后电导新模型

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493161

E. Miranda

引用次数: 1

Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric 高压氘退火对高k栅极电介质mosfet电学特性和可靠性的影响

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493185

H. Park, M.S. Rahman, M. Chang, B. Lee, M. Gardner, C. Young, H. Hwang

引用次数: 9

Accelerating aging failures in MEMS devices 加速MEMS器件老化失效

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493105

D. M. Tanner, J. Walraven, M. Dugger, T. B. Parson, S. A. Candelaria, M. Jenkins, A. Corwin, J. A. Ohlhausen, E. M. Huffman

{"title":"Accelerating aging failures in MEMS devices","authors":"D. M. Tanner, J. Walraven, M. Dugger, T. B. Parson, S. A. Candelaria, M. Jenkins, A. Corwin, J. A. Ohlhausen, E. M. Huffman","doi":"10.1109/RELPHY.2005.1493105","DOIUrl":"https://doi.org/10.1109/RELPHY.2005.1493105","url":null,"abstract":"The feasibility of using temperature and humidity to age vapor-deposited SAM-coated electrostatic-actuated MEMS devices with contacting surfaces was determined. Failures were dependent on both temperature and humidity. The trend indicated longer life at both lower temperatures and lower humidity levels. Using cantilever beams, measurements reveal degradation of the VSAM (vapor-deposited self assembled monolayer) surface coating when stressed at 300/spl deg/C with controlled humidity environments of 500 and 2000 ppmv. In particular, we have seen the surface adhesion change for these beams stressed at 300/spl deg/C for time intervals of 10, 24, 50, 100, and 200 hours. However, there is no measurable change after 2 hours. The higher humidity case promotes the same surface adhesion change in a factor of ten less time. The complex MEMS devices tested followed the same trends as the beam test structures. We definitely observe a failure of the MEMS devices due to the environment with most failures occurring at 300/spl deg/C and some failures at 200/spl deg/C. These failures are due to an adhesion site in the hub of the load gear where the typical gap is 0.3 /spl mu/m.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"46 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122968630","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 10

Industry study on issues of MEMS reliability and accelerated lifetime testing MEMS可靠性和加速寿命测试问题的行业研究

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493104

C. Fung

引用次数: 18

Reliability investigations for manufacturable high density PRAM 可制造高密度PRAM的可靠性研究

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493077

K. Kim, S. Ahn

引用次数: 127

Threshold voltage instability of HfSiO dielectric MOSFET under pulsed stress 脉冲应力下HfSiO介电MOSFET阈值电压的不稳定性

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493179

R. Choi, R. Harris, B. Lee, C. Young, J. Sim, K. Matthews, M. Pendley, G. Bersuker

引用次数: 0

Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide 厚栅极氧化物亚微米40V LDMOS晶体管的热载流子可靠性

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI: 10.1109/RELPHY.2005.1493148

J.F. Chen, Kuo-Ming Wu, Kaung-Wan Lin, Y. Su, S. Hsu

引用次数: 33