厚栅极氧化物亚微米40V LDMOS晶体管的热载流子可靠性

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493148

J.F. Chen, Kuo-Ming Wu, Kaung-Wan Lin, Y. Su, S. Hsu

{"title":"厚栅极氧化物亚微米40V LDMOS晶体管的热载流子可靠性","authors":"J.F. Chen, Kuo-Ming Wu, Kaung-Wan Lin, Y. Su, S. Hsu","doi":"10.1109/RELPHY.2005.1493148","DOIUrl":null,"url":null,"abstract":"The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher V/sub gs/ stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"86 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"33","resultStr":"{\"title\":\"Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide\",\"authors\":\"J.F. Chen, Kuo-Ming Wu, Kaung-Wan Lin, Y. Su, S. Hsu\",\"doi\":\"10.1109/RELPHY.2005.1493148\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher V/sub gs/ stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.\",\"PeriodicalId\":320150,\"journal\":{\"name\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"volume\":\"86 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"33\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2005.1493148\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2005.1493148","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 33

摘要

首次提出了厚栅氧化LDMOS晶体管的热载流子可靠性，发现了两种不同的行为。首先，由于柯克效应，较高的V/sub / gs/应力导致更大的降解。其次，由于退化的恢复，交流寿命比直流寿命长得多。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Hot-carrier reliability in submicrometer 40V LDMOS transistors with thick gate oxide

The hot-carrier reliability in thick gate oxide LDMOS transistors is presented for the first time and two distinct behaviors are found. First, higher V/sub gs/ stressing results in a greater degradation because of the Kirk effect. Second, AC lifetime is much longer than DC lifetime because of the recovery in degradation.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

自引率

0.00%

发文量