可制造高密度PRAM的可靠性研究

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493077

K. Kim, S. Ahn

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引用次数: 127

摘要

本文介绍了一种新型存储材料——硫族化合物——相变存储器(PRAM)。采用0.12 /spl mu/m技术的64mb PRAM解决并评估了高密度商用存储产品的可靠性问题，如抗干扰性、耐久性和数据保留。此外，还研究了观察到的降解模式和潜在的物理机制。

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Reliability investigations for manufacturable high density PRAM

In this paper, PRAM (phase-change memory), exploiting new memory materials called chalcogenides, is introduced. The reliability issues for high-density commercial memory products such as disturbance immunity, endurance, and data retention are addressed and evaluated by using a 64 Mb PRAM with 0.12 /spl mu/m technology. Moreover, observed degradation modes and underlying physical mechanisms are investigated.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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