高压氘退火对高k栅极电介质mosfet电学特性和可靠性的影响

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493185

H. Park, M.S. Rahman, M. Chang, B. Lee, M. Gardner, C. Young, H. Hwang

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引用次数: 9

摘要

为了完全钝化高k栅极介质的界面状态，我们开发了一种新的高压(高达100 atm)，纯(100%)氢退火系统。与控制(1 atm)形成气体(H/sub 2//Ar=4%/96%)退火样品相比，高压(5-20 atm)下，纯H/sub 2/退火的nmosfet在400/spl℃下线性漏极电流(I/sub d/)和最大跨导(g/sub m,max/)提高了10-15%。与氢退火相比，D/sub /退火样品具有更长的热载流子寿命。通过优化工艺参数，我们能够提高器件性能和可靠性特性。

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Effect of high pressure deuterium annealing on electrical and reliability characteristics of MOSFETs with high-k gate dielectric

To completely passivate the interface states of high-k gate dielectrics, we have developed a new high-pressure (up to 100 atm), pure (100%) hydrogen annealing system. Compared with the control (1 atm) forming gas (H/sub 2//Ar=4%/96%) annealed sample, high pressure (5-20 atm), pure H/sub 2/ annealing of nMOSFETs at 400/spl deg/C shows 10-15% improvement in linear drain current (I/sub d/) and maximum transconductance (g/sub m,max/). Compared with hydrogen annealing, D/sub 2/ annealed samples exhibit longer hot carrier lifetime. By optimizing the process parameters, we are able to improve both device performance and reliability characteristics.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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