A new model for the post-breakdown conductance of MOS devices based on the generalized diode equation

Abstract

A new analytic model for the post-breakdown conductance of MOS devices with sub-5 nm gate oxides is presented. The model arises from the solution of the generalized diode equation, namely a diode-type equation with series resistance. The expression for the conductance-voltage characteristic is found by invoking the mathematical properties of the Lambert W function. We show that this new approach improves over a previous one, the quantum point contact model, especially in the low biases range where the contact effect between electrodes seems to play a crucial role.