Reliability investigations for manufacturable high density PRAM

Abstract

In this paper, PRAM (phase-change memory), exploiting new memory materials called chalcogenides, is introduced. The reliability issues for high-density commercial memory products such as disturbance immunity, endurance, and data retention are addressed and evaluated by using a 64 Mb PRAM with 0.12 /spl mu/m technology. Moreover, observed degradation modes and underlying physical mechanisms are investigated.