30 nm栅长超高宽高比finfet的可靠性研究

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493144

W. Liao, Shiao-Shien Chen, S. Chiang, W. Shiau

{"title":"30 nm栅长超高宽高比finfet的可靠性研究","authors":"W. Liao, Shiao-Shien Chen, S. Chiang, W. Shiau","doi":"10.1109/RELPHY.2005.1493144","DOIUrl":null,"url":null,"abstract":"3D vertical double gate (FinFET) devices with an ultra-high aspect ratio (Si-fin height/width=H/W>7) and gate nitrided oxide (N/O) of 14/spl Aring/ have been successfully developed. This paper details reliability characterizations, including V/sub bd/, Q/sub bd/, NMOS HCI (hot carrier injection) DC and AC lifetimes as well as PMOS NBTI (negative bias temperature instability) lifetimes, which indicate robust properties for future industrial applications.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Reliability investigation upon 30 nm gate length ultra-high aspect ratio FinFETs\",\"authors\":\"W. Liao, Shiao-Shien Chen, S. Chiang, W. Shiau\",\"doi\":\"10.1109/RELPHY.2005.1493144\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"3D vertical double gate (FinFET) devices with an ultra-high aspect ratio (Si-fin height/width=H/W>7) and gate nitrided oxide (N/O) of 14/spl Aring/ have been successfully developed. This paper details reliability characterizations, including V/sub bd/, Q/sub bd/, NMOS HCI (hot carrier injection) DC and AC lifetimes as well as PMOS NBTI (negative bias temperature instability) lifetimes, which indicate robust properties for future industrial applications.\",\"PeriodicalId\":320150,\"journal\":{\"name\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"volume\":\"85 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2005.1493144\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2005.1493144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 4

摘要

成功开发了具有超高长宽比(Si-fin高度/宽度=H/W>7)和栅极氮化氧化物(N/O)为14/spl / Aring/的3D垂直双栅极(FinFET)器件。本文详细介绍了可靠性特性，包括V/sub / bd/、Q/sub / bd/、NMOS HCI(热载流子注入)直流和交流寿命，以及PMOS NBTI(负偏置温度不稳定性)寿命，这些都表明了未来工业应用的强大性能。

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Reliability investigation upon 30 nm gate length ultra-high aspect ratio FinFETs

3D vertical double gate (FinFET) devices with an ultra-high aspect ratio (Si-fin height/width=H/W>7) and gate nitrided oxide (N/O) of 14/spl Aring/ have been successfully developed. This paper details reliability characterizations, including V/sub bd/, Q/sub bd/, NMOS HCI (hot carrier injection) DC and AC lifetimes as well as PMOS NBTI (negative bias temperature instability) lifetimes, which indicate robust properties for future industrial applications.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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