Hot carrier reliability in GaAs PHEMT MMIC power amplifiers

Abstract

The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionization on devices under RF-drive. Furthermore, the degradations of drain current (I/sub ds/), transconductance (G/sub m/), and output power (P/sub out/) exhibit a similar dependence on gate current (I/sub g/) induced by RF-drive lifetest. Additionally, using the results of a long-term lifetest (up to 6,000 hours), an empirical model for hot carrier reliability was developed to predict the long-term power performance of 0.15 /spl mu/m GaAs MMIC power amplifiers.