GaAs PHEMT MMIC功率放大器的热载流子可靠性

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493157

Y. Chou, R. Grundbacher, R. Lai, G. Li, Q. Kan, M. Yu, L. Callejo, D. Leung, D. Eng, T. Block, A. Oki

{"title":"GaAs PHEMT MMIC功率放大器的热载流子可靠性","authors":"Y. Chou, R. Grundbacher, R. Lai, G. Li, Q. Kan, M. Yu, L. Callejo, D. Leung, D. Eng, T. Block, A. Oki","doi":"10.1109/RELPHY.2005.1493157","DOIUrl":null,"url":null,"abstract":"The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionization on devices under RF-drive. Furthermore, the degradations of drain current (I/sub ds/), transconductance (G/sub m/), and output power (P/sub out/) exhibit a similar dependence on gate current (I/sub g/) induced by RF-drive lifetest. Additionally, using the results of a long-term lifetest (up to 6,000 hours), an empirical model for hot carrier reliability was developed to predict the long-term power performance of 0.15 /spl mu/m GaAs MMIC power amplifiers.","PeriodicalId":320150,"journal":{"name":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","volume":"115 22 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Hot carrier reliability in GaAs PHEMT MMIC power amplifiers\",\"authors\":\"Y. Chou, R. Grundbacher, R. Lai, G. Li, Q. Kan, M. Yu, L. Callejo, D. Leung, D. Eng, T. Block, A. Oki\",\"doi\":\"10.1109/RELPHY.2005.1493157\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionization on devices under RF-drive. Furthermore, the degradations of drain current (I/sub ds/), transconductance (G/sub m/), and output power (P/sub out/) exhibit a similar dependence on gate current (I/sub g/) induced by RF-drive lifetest. Additionally, using the results of a long-term lifetest (up to 6,000 hours), an empirical model for hot carrier reliability was developed to predict the long-term power performance of 0.15 /spl mu/m GaAs MMIC power amplifiers.\",\"PeriodicalId\":320150,\"journal\":{\"name\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"volume\":\"115 22 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2005-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RELPHY.2005.1493157\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RELPHY.2005.1493157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 2

摘要

研究了室温下热载流子应力测试对射频驱动下0.15 /spl mu/m GaAs PHEMT MMIC功率放大器的影响。结果表明，在射频驱动下，冲击电离对器件产生的栅极电流会引起输出功率下降。此外，射频驱动寿命试验引起的漏极电流(I/sub - ds/)、跨导(G/sub - m/)和输出功率(P/sub - out/)的衰减与栅极电流(I/sub - G/)有相似的相关性。此外，利用长期寿命测试(长达6000小时)的结果，开发了热载流子可靠性的经验模型，以预测0.15 /spl mu/m GaAs MMIC功率放大器的长期功率性能。

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Hot carrier reliability in GaAs PHEMT MMIC power amplifiers

The effects of hot carrier stress testing on 0.15 /spl mu/m GaAs PHEMT MMIC power amplifiers under RF-drive at room temperature were investigated. The results show that output power degradation is induced by gate current generated from impact ionization on devices under RF-drive. Furthermore, the degradations of drain current (I/sub ds/), transconductance (G/sub m/), and output power (P/sub out/) exhibit a similar dependence on gate current (I/sub g/) induced by RF-drive lifetest. Additionally, using the results of a long-term lifetest (up to 6,000 hours), an empirical model for hot carrier reliability was developed to predict the long-term power performance of 0.15 /spl mu/m GaAs MMIC power amplifiers.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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