漏极扩展PMOS晶体管中的电子捕获和界面捕获

2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual. Pub Date : 2005-04-17 DOI:10.1109/RELPHY.2005.1493147

P. Moens, F. Bauwens, M. Nelson, M. Tack

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引用次数: 37

摘要

首次利用电荷泵送(CP)研究了p型横向漏极扩展MOS (DeMOS)的热载子行为。在热载流子应力的早期阶段，会发生电子注入和俘获。随着应力时间的增加，隔层氧化物中界面陷阱的形成成为主要机制。通过这种方式，解释了特定导通电阻Ron的异常退化。

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Electron trapping and interface trap generation in drain extended PMOS transistors

The hot carrier behavior of a p-type lateral drain extended MOS (DeMOS) is for the first time investigated using charge pumping (CP). In an early stage of hot carrier stress, electron injection and trapping occurs. With increasing stress time, the interface trap formation in the spacer oxide becomes the dominant mechanism. In this way, the abnormal degradation of the specific on-resistance Ron is explained.

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2005 IEEE International Reliability Physics Symposium, 2005. Proceedings. 43rd Annual.

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