A new finding on NBTI lifetime model and an investigation on NBTI degradation characteristic for 1.2nm ultra thin oxide [MOSFETs]

Abstract

A new finding on 1.2 nm NBTI lifetime is proposed as an E-model for the low field region (<10 MV/cm) and a power law model for the high field region (>10 MV/cm). The NBTI lifetime stressed in the low field (<10 MV/cm) and extrapolated by the E-model is a better choice for 1.2 nm NBTI lifetime prediction. The NBTI degradation characteristics, accelerated degradation factors and lifetime prediction model for this 1.2 nm ultra thin oxide are systematically investigated. The mechanism of NBTI degradation on 1.2 nm ultra thin oxide is explained as the hydrogen diffusion model which supports the non-saturated degradation behavior and lifetime prediction model.