Proceedings of 1993 IEEE International SOI Conference最新文献_第7页

Analysis of color variation in bonded SOI wafers 键合SOI晶圆颜色变化分析

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344589

P. Clapis, A. Ledger, K. Daniell

引用次数: 1

Hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's 累积模式薄膜SOI/NMOSFET的热载子效应

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344585

Binglong Zhang, T. Ma, L.K. Wang

引用次数: 1

Shallow oxygen-related donors in bonded and etchback silicon on insulator structures 绝缘体结构上键合硅和蚀刻硅的浅氧相关给体

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344606

W. L. Warren, D. Fleetwood, J. Schwank, M. Shaneyfelt, P. Winokur, R. Devine, W. Maszara, J.B. McKitterick

引用次数: 0

A bulk-JFET and CMOS/SIMOX technology for low noise, high speed charge-sensitive amplifier 采用jfet和CMOS/SIMOX技术实现低噪声、高速电荷敏感放大器

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344544

W. Buttler, G. Cesura, P. Manfredi, V. Re, V. Speziali, Holger Vogt

引用次数: 10

Design methodology for low power, high-speed CMOS devices utilizing SOI technology 采用SOI技术的低功耗、高速CMOS器件的设计方法

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344550

A. Yoshino, K. Kumagai, S. Kurosawa, H. Itoh, K. Okumura

引用次数: 6

Measurement of minority carrier diffusion length and lifetime in SOI devices by flying spot laser scanner as a function of residual misfit 用飞光斑激光扫描仪测量SOI器件中少数载流子扩散长度和寿命的残差函数

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344600

H. Baumgart, R. Egloff, E. Arnold, T. Letavic, S. Merchant, S. Mukherjee, H. Bhimnathwala

引用次数: 0

Ultra-thin-film SOI technology and its application to next generation CMOS devices 超薄膜SOI技术及其在下一代CMOS器件中的应用

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344613

S. Kawamura

{"title":"Ultra-thin-film SOI technology and its application to next generation CMOS devices","authors":"S. Kawamura","doi":"10.1109/SOI.1993.344613","DOIUrl":"https://doi.org/10.1109/SOI.1993.344613","url":null,"abstract":"Although silicon-on-insulator (SOI) technology has been developed for over a quarter of a century, it has been in use only in specialized niche applications such as space and defense electronics systems. This is mainly because SOI manufacturing yields have been considered to be lower than their conventional bulk counterparts. In spite of the recent development of fully depleted SOI devices fabricated in ultra-thin silicon on insulator films which are considered very attractive for high-speed submicron ULSI applications because of the reduced short-channel effect in addition to the generic SOI advantages of latchup immunity and reduced parasitic capacitances, several problems which should be overcome still remain, both in materials and device technology as well as in manufacturing aspects,before thin-film SOI can be considered mainstream. The major potential application for ultra-thin SOI films is quarter micron CMOS devices for advanced logic circuits. It is anticipated that CMOS devices having design rules of 0.25 /spl mu/m or less will be in mass production by the end of this century, and conventional bulk silicon seems to be unsuitable for such ULSI devices mainly because of severe short channel effects. Instead, thin-film SOI with fully depleted silicon films is expected to be an alternative.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126482863","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 3

SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology 采用硅直接键合(SDB)技术实现体电位接地的SOI MOSFET

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344574

W. Kang, Sung-Won Kang, Jong-Son Lyu, Sang-Won Kang, Jin-Hyo Lee

引用次数: 2

The effects of floating body operation on hot carrier behavior in SOS MOSFETs 浮体操作对SOS mosfet热载流子行为的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344586

E. Y. Chao, D. Quon, T. Her, G. Li, J. White, P. Liu, R. Kjar

引用次数: 0

SIMOX circuit reliability SIMOX电路可靠性

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344554

L. Cohn, H. Hosack, R. Cherne, P. Fechner

{"title":"SIMOX circuit reliability","authors":"L. Cohn, H. Hosack, R. Cherne, P. Fechner","doi":"10.1109/SOI.1993.344554","DOIUrl":"https://doi.org/10.1109/SOI.1993.344554","url":null,"abstract":"SIMOX SOI materials have the capability to support fabrication of a wide range of large area, high performance, radiation hardened, integrated circuits. Continuous improvements in the quality of SIMOX materials has been demonstrated on a number of DoD programs, and a steady progression of devices from 16 K SRAM complexity to 1 M SRAM complexity have been produced. Even with the outstanding progress demonstrated in fabrication, the reliability of devices produced on SIMOX materials has not been extensively discussed. Of particular interest is the reliability effects of the SIMOX buried oxide, because of the unique processes used in its formation, and the previous identification of various types of defects which may be present. This paper presents reliability data on devices fabricated on SIMOX substrates, as reviewing on-going reliability evaluations of the SIMOX buried oxide itself. Data on circuit reliability testing at several rad-hard IC manufacturers are used to document the ability of SIMOX based devices to meet stringent military reliability qualification requirements. Evaluation of failures in the reliability testing show that the failure modes for SIMOX devices are much the same as for bulk devices. No new failure modes have been found that can be associated with the presence of the buried oxide.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"87 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122951669","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 2