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Proceedings of 1993 IEEE International SOI Conference最新文献

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New concepts of SOI modelling for use in circuit simulator 在电路模拟器中应用SOI建模的新概念
Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344576
J.T. Lin, K. G. Nichols, W. Redman-White
{"title":"New concepts of SOI modelling for use in circuit simulator","authors":"J.T. Lin, K. G. Nichols, W. Redman-White","doi":"10.1109/SOI.1993.344576","DOIUrl":"https://doi.org/10.1109/SOI.1993.344576","url":null,"abstract":"In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131962154","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-injection studies of buried oxide layers in SIMOX and BESOI structures SIMOX和BESOI结构中埋藏氧化层的光注入研究
Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344608
A. Revesz, V. Afanas'ev, H. Hughes
{"title":"Photo-injection studies of buried oxide layers in SIMOX and BESOI structures","authors":"A. Revesz, V. Afanas'ev, H. Hughes","doi":"10.1109/SOI.1993.344608","DOIUrl":"https://doi.org/10.1109/SOI.1993.344608","url":null,"abstract":"Illumination of a BESOI sample with photon energy below 6 eV (no electron-hole pair generation on the oxide) under positive bias on the metal electrode results in positive charge in the oxide which can be almost completely eliminated by changing the bias polarity. The C-V curves exhibit large hysteresis effects after illumination. It is suggested that the mechanism is photolysis of Si-OH and/or Si-H groups which does not require electron injection: the resulting H+ ions then drift under bias. The behavior of the BESOI sample is different from both SIMOX BOX and thermal oxide, but is somewhat similar to that shown by deposited Si0/sub 2/ films.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130219808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Selection of operation mode on SOI/MOSFETs for high-resistivity load static memory cell 高电阻率负载静态存储电池SOI/ mosfet工作模式的选择
Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344575
Y. Inoue, Y. Yamaguchi, T. Yamaguchi, J. Takahashi, T. Iwamatsu, T. Wada, Y. Nishimura, T. Nishimura, N. Tsubouchi
{"title":"Selection of operation mode on SOI/MOSFETs for high-resistivity load static memory cell","authors":"Y. Inoue, Y. Yamaguchi, T. Yamaguchi, J. Takahashi, T. Iwamatsu, T. Wada, Y. Nishimura, T. Nishimura, N. Tsubouchi","doi":"10.1109/SOI.1993.344575","DOIUrl":"https://doi.org/10.1109/SOI.1993.344575","url":null,"abstract":"SOI/MOSFETs are widely known to have some advantages such as reduction of parasitic capacitance, improvement of subthreshold characteristics and increased drive current, compared with bulk-Si/MOSFETs. Moreover, this structure provides the reduction in the substrate-bias effect because the back-gate bias (Si substrate) is applied to the channel region through thick buried oxide. In the present paper, we propose the best choice of operation mode of SOI/MOSFETs in a high-resistivity load SRAM cell to improve the stability in the memory cell and to obtain sufficient static noise margin providing non-destructive reading of cell data at low supply voltage.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125885959","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
SOI technology outlook for sub-0.25 /spl mu/m CMOS, challenges and opportunities 低于0.25 /spl μ m CMOS的SOI技术前景、挑战与机遇
Proceedings of 1993 IEEE International SOI Conference Pub Date : 1900-01-01 DOI: 10.1109/SOI.1993.344614
B. Davari, H. Hovel, G. Shahidi
{"title":"SOI technology outlook for sub-0.25 /spl mu/m CMOS, challenges and opportunities","authors":"B. Davari, H. Hovel, G. Shahidi","doi":"10.1109/SOI.1993.344614","DOIUrl":"https://doi.org/10.1109/SOI.1993.344614","url":null,"abstract":"In this paper, the outlook for the SOI technology in the sub-0.25 /spl mu/m CMOS regime is discussed. The key challenges and opportunities for the SOI technology to become a main stream semiconductor technology are presented.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121589768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 11
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