Proceedings of 1993 IEEE International SOI Conference最新文献

Thin-film silicon-on-insulator (SOI) device applications of selective epitaxial growth 薄膜绝缘体上硅(SOI)器件选择性外延生长的应用

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344584

S. Venkatesan, Chitra K. Subramanian, G. Neudeck, J. Denton

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引用次数: 4

Crystallographic effects in implantation of oxygen for SIMOX SIMOX氧注入中的晶体学效应

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344599

M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra

引用次数: 0

High temperature testing of SOI devices to 400/spl deg/C SOI器件400/spl℃高温测试

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344547

R. Grzybowski, S.M. Tyson

引用次数: 4

Silicon on diamond heat sinks by bonding and etch back 金刚石上的硅通过粘接和蚀刻来散热

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344593

A. Soderbarg, B. Edholm, J. Olsson, S. Tiensuu, E. Johansson

引用次数: 2

A feasibility study of SiC on oxide by wafer bonding and layer transferring 利用晶圆键合和层转移技术制备SiC的可行性研究

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344592

Q. Tong, U. Gosele, C. Yuan, A. Steckl

引用次数: 4

Self-heating effects in SOI MOSFET's operated at low temperature 在低温下工作的 SOI MOSFET 的自热效应

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344581

J. Jomaah, F. Balestra, G. Ghibaudo

引用次数: 11

Characterization of SIMOX material with channeled and unchanneled oxygen implantation 通道氧和非通道氧注入SIMOX材料的表征

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344597

M. Twigg, L. Allen, B.J. Mrstik, L.T. Ardis

引用次数: 0

Subthreshold MOSFET conduction model and optimal scaling for deep-submicron fully depleted SOI CMOS 深亚微米完全耗尽SOI CMOS的亚阈值MOSFET传导模型和最佳缩放

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344560

P. Yeh, J. Fossum

引用次数: 8

Improvement of the breakdown field of SIMOX buried oxide layers SIMOX埋地氧化层击穿场的改善

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344611

S. Nakashima, M. Harada, T. Tsuchiya

引用次数: 6

Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs 反转模式和累积模式全耗尽SOI mosfet中热载子退化效应的比较

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344551

O. Faynot, L. T. Su, S. Cristoloveanu, C. Raynaud, J. E. Chung, A. Auberton-Herve, D. Antoniadis

引用次数: 1