SIMOX埋地氧化层击穿场的改善

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344611

S. Nakashima, M. Harada, T. Tsuchiya

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引用次数: 6

摘要

在3.0 × 10/sup 17/和5.0 × 10/sup 17/ cm/sup -2/之间的低剂量下，形成了位错密度小于300 cm/sup -2/的高质量SIMOX晶圆。该晶圆将为SIMOX ulsi的实际制造开辟道路。然而，该晶圆的埋藏氧化层具有相对较低的击穿电场强度，约为4 MV/cm。阐明了产生这种低击穿场的原因，并提出了改善击穿场的方法

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Improvement of the breakdown field of SIMOX buried oxide layers

A high-quality SIMOX wafer with an extremely low dislocation density, less than 300 cm/sup -2/ has been formed at low doses of between 3.0 x 10/sup 17/ and 5.0 x 10/sup 17/ cm/sup -2/. This wafer should open the way to practical fabrication of SIMOX ULSIs. The buried oxide layer of this wafer, however, has a relatively low breakdown electric field strength of around 4 MV/cm. The authors clarify the cause of this low breakdown field and propose a method for improving it.<>

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Proceedings of 1993 IEEE International SOI Conference

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