Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344551

O. Faynot, L. T. Su, S. Cristoloveanu, C. Raynaud, J. E. Chung, A. Auberton-Herve, D. Antoniadis

引用次数: 1

Abstract

It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films.<>

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反转模式和累积模式全耗尽SOI mosfet中热载子退化效应的比较

结果表明，超薄膜(UTF)反转模式(IM)和累积模式(AM) SIMOX mosfet在热载流子退化方面表现相似。主要的退化发生在被激活的界面，但界面耦合的影响可能会混淆寿命预测。为了正确评估器件寿命，必须清楚地解释和解耦缺陷(如埋藏氧化物中的缺陷)。在超薄膜中没有明显的增强降解的证据。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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