Characterization of SIMOX material with channeled and unchanneled oxygen implantation

Abstract

It is a goal of electronic materials fabrication efforts to produce SIMOX with a low dislocation density in the superficial Si layer (the device layer) as well as a buried oxide (BOX) layer consisting of high quality SiO/sub 2/. In this paper, we study the effects of varying the implantation angle in a search for the optimal implantation conditions from the standpoint of both the BOX and the device layer. Using transmission electron microscopy (TEM) and spectroscopic ellipsometry (SE), we show that there is a significant difference between channeled and unchanneled implantation in SIMOX.<>