SIMOX氧注入中的晶体学效应

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344599

M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra

{"title":"SIMOX氧注入中的晶体学效应","authors":"M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra","doi":"10.1109/SOI.1993.344599","DOIUrl":null,"url":null,"abstract":"In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"30 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Crystallographic effects in implantation of oxygen for SIMOX\",\"authors\":\"M. Anc, B.F. Cordts, L. Allen, W. Krull, M. Guerra\",\"doi\":\"10.1109/SOI.1993.344599\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"30 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344599\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344599","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

在本文中，我们将讨论氧注入中的定向或晶体效应，重点是由于沟槽现象而形成针孔的可能性的影响，以及有意沟槽注入的应用以获得更好的薄膜层性能

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Crystallographic effects in implantation of oxygen for SIMOX

In this paper we will discuss aspects of directional or crystallographic effects in implantation of oxygen, with emphasis on the possibility of effects of pinhole formation due to the channeling phenomenon, and application of the intentionally channeled implant to obtain better properties of thin film layers.<>

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Proceedings of 1993 IEEE International SOI Conference

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