Silicon on diamond heat sinks by bonding and etch back

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344593

A. Soderbarg, B. Edholm, J. Olsson, S. Tiensuu, E. Johansson

引用次数: 2

Abstract

In this abstract a concept is presented aimed to increase the heat distribution and to reduce the thermal resistance in SOI-devices. This is realized using a combination of fusion bonding and thinning against stopping layers with deposition of poly-crystalline diamond as the buried isolator. Thus, by replacing oxide with diamond, a Silicon-on-Diamond (SOD) structure is formed.<>

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金刚石上的硅通过粘接和蚀刻来散热

在这个抽象的概念，提出了旨在增加热量分布和减少热阻在soi器件。这是通过融合键合和减薄阻止层的组合实现的，并沉积多晶金刚石作为埋藏隔离器。因此，通过用金刚石取代氧化物，形成了金刚石上硅(SOD)结构

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of 1993 IEEE International SOI Conference

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