O. Faynot, L. T. Su, S. Cristoloveanu, C. Raynaud, J. E. Chung, A. Auberton-Herve, D. Antoniadis
{"title":"反转模式和累积模式全耗尽SOI mosfet中热载子退化效应的比较","authors":"O. Faynot, L. T. Su, S. Cristoloveanu, C. Raynaud, J. E. Chung, A. Auberton-Herve, D. Antoniadis","doi":"10.1109/SOI.1993.344551","DOIUrl":null,"url":null,"abstract":"It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"24 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs\",\"authors\":\"O. Faynot, L. T. Su, S. Cristoloveanu, C. Raynaud, J. E. Chung, A. Auberton-Herve, D. Antoniadis\",\"doi\":\"10.1109/SOI.1993.344551\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"24 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344551\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344551","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Comparison of hot-carrier degradation effects in inversion-mode and accumulation-mode fully depleted SOI MOSFETs
It is demonstrated that ultra-thin film (UTF) inversion-mode (IM) and accumulation-mode (AM) SIMOX MOSFETs behave similarly in terms of hot-carrier degradation. The primary degradation occurs at the interface which is activated but the effects of interface coupling can confuse lifetime predictions. Defects (such as in the buried oxide) must be clearly accounted for and decoupled in order to properly evaluate device lifetime. There was no evidence of significant enhanced degradation in ultra-thin films.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
