在电路模拟器中应用SOI建模的新概念

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344576

J.T. Lin, K. G. Nichols, W. Redman-White

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摘要

本文提出了一些新的概念，使我们能够求解双栅控制SOI器件的两个表面的表面电位，并对器件进行一般建模。SPICE3e2的一些仿真结果也得到了验证

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New concepts of SOI modelling for use in circuit simulator

In this paper some new concepts, which allow us to solve surface potentials for the two surfaces of the double gate controlled SOI device and to carry out general modelling of the device, are presented. Some simulation results from SPICE3e2 are also demonstrated.<>

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Proceedings of 1993 IEEE International SOI Conference

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