Proceedings of 1993 IEEE International SOI Conference最新文献_第6页

Design and manufacturing considerations of a 0.5 /spl mu/m CMOS technology on TFSOI 基于TFSOI的0.5 /spl mu/m CMOS技术的设计与制造考虑

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344565

B. Hwang, J. Tsao, M. Racanelli, M. Huang, J. Foerstner, T. Wetteroth, Ik-Sung Lim

引用次数: 12

Generation lifetime measurements in fully depleted enhancement and accumulation mode SOI MOSFETs 全耗尽增强和积累模式SOI mosfet的生成寿命测量

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344582

S. Sinha, A. Zaleski, D. Ioannou, F. Brady

引用次数: 0

Effects of self-heating-induced negative output conductance in SOI circuits SOI电路中自热诱导负输出电导的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344555

M. Fox, J. Brodsky

引用次数: 7

Material development of SIMOX with a thin box 薄盒SIMOX材料的研制

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344610

D. Sadana, H. Hovel, J. Freeouf, S. Chu, P. McFarland, M. Guerra

引用次数: 2

The effect of intrinsic body resistance on the breakdown characteristics of DBTS NFD SOI MOSFET's 固有体电阻对DBTS NFD SOI MOSFET击穿特性的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344588

Dongwoo Suh, J. Fossum

引用次数: 2

New SOI-based applications 新的基于soi的应用程序

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344612

A. Auberton-Herve

{"title":"New SOI-based applications","authors":"A. Auberton-Herve","doi":"10.1109/SOI.1993.344612","DOIUrl":"https://doi.org/10.1109/SOI.1993.344612","url":null,"abstract":"Since the end of the 80's, SOI developments in general have raised an increased interest due to the material's commercial availability. The SIMOX technique (Separation by IMplanted OXygen) was the first to provide ultra thin silicon monocrystalline film on top of silicon dioxide as an industrial product and is leading in the SOI industrial developments. The new developments in oxygen ion implantation have pushed the limit of the SIMOX technology to the thinnest insulating layer commercially available. The standard insulating layer was until today 400 nm. The new product we have developed named \"low dose product\", has a buried oxide layer as thin as 80 nm. The silicon layer on top can be adjusted down to 50 nm thereby providing the thinnest combination of SOI layers. The applications of such thin films are in the field of low voltage products. The battery operated ICs for portable systems and ULSI CMOS logic ICs with gate length below 0.2 /spl mu/m are expected to be the two major applications of this new material. The speed improvement of SOI ICs compared to standard silicon technologies is better than a factor of two for low voltage with a lower power consumption. Additional advantages of using SOI is the higher packing density and a simplified process compared to standard technologies. Other applications include: MMICs, BiCMOS, optoelectronics, and smart power.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128131097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}

引用次数: 5

Inversion electron effective mobility in SOI NMOSFETs SOI nmosfet的反转电子有效迁移率

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344567

M. Sherony, L. T. Su, J. E. Chung, D. Antoniadis

引用次数: 1

Considerations for SIMOX low voltage applications SIMOX低压应用的注意事项

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344542

M. Alles, W. Krull

引用次数: 1

ACUTE: a high performance analog complementary polysilicon emitter bipolar technology utilizing SOI/trench full dielectric isolation ACUTE:一种高性能模拟互补多晶硅发射极双极技术，利用SOI/沟槽全介电隔离

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344573

R. Jerome, I. Post, T.G. Travnicek, G.M. Wodek, K.E. Huffstater, D.R. Williams

引用次数: 8

High speed whole wafer film thickness mapper 高速整片薄膜厚度测量仪

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI: 10.1109/SOI.1993.344590

A. Ledger, P. Clapis

引用次数: 1