固有体电阻对DBTS NFD SOI MOSFET击穿特性的影响

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344588

Dongwoo Suh, J. Fossum

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引用次数: 2

摘要

DBTS(双体束缚源)NFD(非完全耗尽)SOI MOSFET结构中非零体电阻(R/sub B/)的存在导致双极诱导的过早击穿，其机制类似于体MOSFET中的寄生双极效应。然而，这些条件可能会产生误导，因为保持电压和回拍电压不可区分地称为击穿电压，并且所述的击穿条件，即(M-1)/spl beta/=1，与R/sub B/无关。为了澄清这个问题，并对DBTS的有效性给出物理见解，我们分析了击穿特性及其对R/sub / B/的依赖关系，并对保持电压和snapback电压进行了简单而物理的描述。这些推导得到了SOISPICE-3模拟的辅助和支持，其中我们为NFD SOI MOSFET实现了一个基于物理的模型

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The effect of intrinsic body resistance on the breakdown characteristics of DBTS NFD SOI MOSFET's

The existence of non-zero body resistance (R/sub B/) in the DBTS (double-body-tied-to-source) NFD (non-fully depleted) SOI MOSFET structure leads to bipolar-induced premature breakdown, the mechanism of which is similar to the parasitic bipolar effect in the bulk MOSFET. The conditions can be misleading, however, because the holding voltage and the snapback voltage are indistinguishably referred to as the breakdown voltage, and the stated condition for breakdown, i.e., (M-1)/spl beta/=1, is independent of R/sub B/. To clarify this issue and to give physical insight regarding the efficacy of the DBTS, we analyze the breakdown characteristics and their dependence on R/sub B/, and we present simple but physical descriptions of the holding and snapback voltages. The derivations are aided and supported by simulations using SOISPICE-3, in which we have implemented a physics-based model for the NFD SOI MOSFET.<>

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Proceedings of 1993 IEEE International SOI Conference

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