Material development of SIMOX with a thin box

Abstract

It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrated on SIMOX material. The standard SIMOX contains a thin SOI layer of 1800 /spl Aring/ and a buried oxide (BOX) of 3800 /spl Aring/. It appears from the simulation data that an optimum fully depleted SOI device may require a BOX of /spl lsim/2000 /spl Aring/ for two reasons: (i) to allow field lines to penetrate through the BOX and (ii) to minimize superficial Si heating. The SIMOX material development for the present investigation is therefore aimed at optimizing implant/annealing conditions which provide a thin BOX (/spl lsim/2000 /spl Aring/) and lower defects.<>