Hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's

Abstract

Hot-carrier effects in enhancement-mode thin-film SOI/NMOSFET's have been studied quite extensively, but similar studies in accumulation-mode devices are still lacking. This paper will report hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's. Changes in both front- and back-channel transistor parameters are discussed. One particularly interesting effect is the increased drain-source breakdown voltage when measured in the reverse mode after hot-carrier damage. A model based on the increased hole/electron recombination rate due to hot-carrier induced back interface traps will be proposed to explain the effect.<>