D. Sadana, H. Hovel, J. Freeouf, S. Chu, P. McFarland, M. Guerra
{"title":"薄盒SIMOX材料的研制","authors":"D. Sadana, H. Hovel, J. Freeouf, S. Chu, P. McFarland, M. Guerra","doi":"10.1109/SOI.1993.344610","DOIUrl":null,"url":null,"abstract":"It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrated on SIMOX material. The standard SIMOX contains a thin SOI layer of 1800 /spl Aring/ and a buried oxide (BOX) of 3800 /spl Aring/. It appears from the simulation data that an optimum fully depleted SOI device may require a BOX of /spl lsim/2000 /spl Aring/ for two reasons: (i) to allow field lines to penetrate through the BOX and (ii) to minimize superficial Si heating. The SIMOX material development for the present investigation is therefore aimed at optimizing implant/annealing conditions which provide a thin BOX (/spl lsim/2000 /spl Aring/) and lower defects.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"19 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Material development of SIMOX with a thin box\",\"authors\":\"D. Sadana, H. Hovel, J. Freeouf, S. Chu, P. McFarland, M. Guerra\",\"doi\":\"10.1109/SOI.1993.344610\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrated on SIMOX material. The standard SIMOX contains a thin SOI layer of 1800 /spl Aring/ and a buried oxide (BOX) of 3800 /spl Aring/. It appears from the simulation data that an optimum fully depleted SOI device may require a BOX of /spl lsim/2000 /spl Aring/ for two reasons: (i) to allow field lines to penetrate through the BOX and (ii) to minimize superficial Si heating. The SIMOX material development for the present investigation is therefore aimed at optimizing implant/annealing conditions which provide a thin BOX (/spl lsim/2000 /spl Aring/) and lower defects.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"19 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344610\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344610","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
It is well established that CMOS SOI technology provides improved device and circuit performance compared to bulk silicon. Extremely fast ring oscillators with delay time as low as 20 ps at 1.5 V and operating at room temperature have been demonstrated on SIMOX material. The standard SIMOX contains a thin SOI layer of 1800 /spl Aring/ and a buried oxide (BOX) of 3800 /spl Aring/. It appears from the simulation data that an optimum fully depleted SOI device may require a BOX of /spl lsim/2000 /spl Aring/ for two reasons: (i) to allow field lines to penetrate through the BOX and (ii) to minimize superficial Si heating. The SIMOX material development for the present investigation is therefore aimed at optimizing implant/annealing conditions which provide a thin BOX (/spl lsim/2000 /spl Aring/) and lower defects.<>
求助内容：
应助结果提醒方式：
京公网安备 11010802042870号
