全耗尽增强和积累模式SOI mosfet的生成寿命测量

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344582

S. Sinha, A. Zaleski, D. Ioannou, F. Brady

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摘要

在这项工作中，我们通过考虑准费米能级的时间变化，提出了对增强模式和积累模式器件的统一分析。这可以精确地确定产生体积，并得到增强方程和积累方程模式器件漏极电流瞬态的zerbst型表达式。

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Generation lifetime measurements in fully depleted enhancement and accumulation mode SOI MOSFETs

In this work we present a unified analysis for both enhancement and accumulation mode devices, by considering the temporal variation of the quasi-Fermi levels. This leads to an accurate determination of the generation volume, and to Zerbst-type expressions for the drain current transients for enhancement equation and accumulation equation mode devices.<>

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Proceedings of 1993 IEEE International SOI Conference

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