{"title":"累积模式薄膜SOI/NMOSFET的热载子效应","authors":"Binglong Zhang, T. Ma, L.K. Wang","doi":"10.1109/SOI.1993.344585","DOIUrl":null,"url":null,"abstract":"Hot-carrier effects in enhancement-mode thin-film SOI/NMOSFET's have been studied quite extensively, but similar studies in accumulation-mode devices are still lacking. This paper will report hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's. Changes in both front- and back-channel transistor parameters are discussed. One particularly interesting effect is the increased drain-source breakdown voltage when measured in the reverse mode after hot-carrier damage. A model based on the increased hole/electron recombination rate due to hot-carrier induced back interface traps will be proposed to explain the effect.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's\",\"authors\":\"Binglong Zhang, T. Ma, L.K. Wang\",\"doi\":\"10.1109/SOI.1993.344585\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Hot-carrier effects in enhancement-mode thin-film SOI/NMOSFET's have been studied quite extensively, but similar studies in accumulation-mode devices are still lacking. This paper will report hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's. Changes in both front- and back-channel transistor parameters are discussed. One particularly interesting effect is the increased drain-source breakdown voltage when measured in the reverse mode after hot-carrier damage. A model based on the increased hole/electron recombination rate due to hot-carrier induced back interface traps will be proposed to explain the effect.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"46 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344585\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344585","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's
Hot-carrier effects in enhancement-mode thin-film SOI/NMOSFET's have been studied quite extensively, but similar studies in accumulation-mode devices are still lacking. This paper will report hot-carrier effects in accumulation-mode thin-film SOI/NMOSFET's. Changes in both front- and back-channel transistor parameters are discussed. One particularly interesting effect is the increased drain-source breakdown voltage when measured in the reverse mode after hot-carrier damage. A model based on the increased hole/electron recombination rate due to hot-carrier induced back interface traps will be proposed to explain the effect.<>
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