采用硅直接键合(SDB)技术实现体电位接地的SOI MOSFET

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344574

W. Kang, Sung-Won Kang, Jong-Son Lyu, Sang-Won Kang, Jin-Hyo Lee

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引用次数: 2

摘要

n沟道SOI MOSFET采用硅直接键合(SDB)技术制造，其主体与接地的p/sup +/多晶硅绑在一起，以消除衬底浮动效应。与具有浮体的SOI mosfet相比，制备的SOI mosfet在漏极电流特性上没有弯曲，并且在较低的栅极电压下具有更高的击穿电压。

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SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

N-channel SOI MOSFET was fabricated by using the silicon direct bonding (SDB) technology, where its body was tied with a grounded p/sup +/ polysilicon for eliminating the substrate floating effect. Fabricated SOI MOSFETs show no kinks on their drain current characteristics and much higher breakdown voltage for lower gate voltages, as compared with SOI MOSFETs with a floating body.<>

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Proceedings of 1993 IEEE International SOI Conference

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