Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

Abstract

We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure.<>