绝缘体结构上键合硅和蚀刻硅的浅氧相关给体

Proceedings of 1993 IEEE International SOI Conference Pub Date : 1993-10-05 DOI:10.1109/SOI.1993.344606

W. L. Warren, D. Fleetwood, J. Schwank, M. Shaneyfelt, P. Winokur, R. Devine, W. Maszara, J.B. McKitterick

{"title":"绝缘体结构上键合硅和蚀刻硅的浅氧相关给体","authors":"W. L. Warren, D. Fleetwood, J. Schwank, M. Shaneyfelt, P. Winokur, R. Devine, W. Maszara, J.B. McKitterick","doi":"10.1109/SOI.1993.344606","DOIUrl":null,"url":null,"abstract":"We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure.<<ETX>>","PeriodicalId":308249,"journal":{"name":"Proceedings of 1993 IEEE International SOI Conference","volume":"60 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Shallow oxygen-related donors in bonded and etchback silicon on insulator structures\",\"authors\":\"W. L. Warren, D. Fleetwood, J. Schwank, M. Shaneyfelt, P. Winokur, R. Devine, W. Maszara, J.B. McKitterick\",\"doi\":\"10.1109/SOI.1993.344606\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure.<<ETX>>\",\"PeriodicalId\":308249,\"journal\":{\"name\":\"Proceedings of 1993 IEEE International SOI Conference\",\"volume\":\"60 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1993-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 1993 IEEE International SOI Conference\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SOI.1993.344606\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 1993 IEEE International SOI Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SOI.1993.344606","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

我们使用电子顺磁共振(EPR)测量研究了可能影响键合和蚀刻SOI (BESOI)晶圆中器件性能的基本材料问题。我们报告了一个新的缺陷，确定为氧相关的供体在处女Si衬底。供体似乎是由粘接过程中的退火产生的，而不是实际粘接过程产生的。

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Shallow oxygen-related donors in bonded and etchback silicon on insulator structures

We have investigated fundamental material issues that may impact device performance in bonded and etchback SOI (BESOI) wafers using electron paramagnetic resonance (EPR) measurements. We report a new defect identified as an oxygen-related donor in the virgin Si substrates. The donor appears to result from the anneal during the bonding process, not from the actual bonding procedure.<>

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Proceedings of 1993 IEEE International SOI Conference

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