Considerations for SIMOX low voltage applications

Abstract

The IC industry move to low voltage presents an opportunity to which SIMOX is well suited. In particular, process simplification related to junction engineering and material cost reduction related to use of thinner buried oxide (BOX) are opportunities to enhance the serious commercialization of SIMOX for low voltage applications. This work addresses issues relevant to the application of present and next generation SIMOX materials and devices to low voltage applications. Advantages of SIMOX operation at low voltage are examined, and results of an analytical analysis of the effects of BOX thickness on associated parasitic capacitances are presented. The analysis shows that SIMOX on P-type substrates maintain the reduced capacitance advantages as the BOX is thinned.<>