A bulk-JFET and CMOS/SIMOX technology for low noise, high speed charge-sensitive amplifier

Abstract

Good low-noise and radiation-tolerant behavior has previously been demonstrated for an amplifier design using a bulk JFET-MOS circuit. It is shown in this paper that these advantages and the speed performance are increased using SIMOX technology. A JFET fully compatible with available CMOS/SIMOX technology is used. This JFET requires only a simple modification of the standard process. Using this process extension the good noise performance of JFETs as amplifier input devices can be combined with the high functional density and versatility of MOS in analog and digital switching and storage.<>