SOI MOSFET with grounded body potential by using the silicon direct bonding (SDB) technology

Abstract

N-channel SOI MOSFET was fabricated by using the silicon direct bonding (SDB) technology, where its body was tied with a grounded p/sup +/ polysilicon for eliminating the substrate floating effect. Fabricated SOI MOSFETs show no kinks on their drain current characteristics and much higher breakdown voltage for lower gate voltages, as compared with SOI MOSFETs with a floating body.<>