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2008 International Conference on Advanced Semiconductor Devices and Microsystems最新文献

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Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices Al0.3Ga0.7N/GaN半导体器件欧姆触点的电学特性
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743291
M. Florovič, J. Kováč, P. Kordos, J. Škriniarová, T. Lalinsky, S. Hascik, M. Michalka, D. Donoval, F. Uherek
{"title":"Electrical properties of ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices","authors":"M. Florovič, J. Kováč, P. Kordos, J. Škriniarová, T. Lalinsky, S. Hascik, M. Michalka, D. Donoval, F. Uherek","doi":"10.1109/ASDAM.2008.4743291","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743291","url":null,"abstract":"Electrical properties of the ohmic contacts for Al0.3Ga0.7N/GaN semiconductor devices were investigated. Two different preparation techniques were used, electron beam evaporation (EBE) and pulsed laser deposition (PLD). The EBE contacts show more than 10-times lower specific contact resistance than those prepared by PLD. Characterization of the HFETs prepared yielded higher saturation drain current and peak transconductance if EBE ohmic contacts were used comparing to PLD ohmic contacts. An optimisation of the PLD procedure to be used at the Al0.3Ga0.7N/GaN device preparation is in progress.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"31 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114031266","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The investigation of semi-insulating GaAs detectors properties after neutron irradiation 中子辐照后半绝缘GaAs探测器性能的研究
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743311
M. Ladzianský, A. Sagaitova, V. Nečas
{"title":"The investigation of semi-insulating GaAs detectors properties after neutron irradiation","authors":"M. Ladzianský, A. Sagaitova, V. Nečas","doi":"10.1109/ASDAM.2008.4743311","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743311","url":null,"abstract":"Bulk semi-insulating (SI) GaAs material due to its relatively high resistance against neutrons [1,2] seems to be an excellent candidate for fabrication of a neutron detector (e.g. neutron digital imaging). Influence of various neutron integral fluencies was studied at a set of detectors based on semi-insulating GaAs. Changes in the detection and electrical properties occurred at various neutron fluencies. Performance of the detectors before and after neutron irradiation was observed via detected spectra of Am radionuclide source. At lower fluencies of neutrons (~1012 n/cm2) the changes in detected spectra and also in current-voltage characteristics are negligible while in the detectors bombarded with higher neutron fluencies (~1013 n/cm2) a fast degradation of detection performance occurred. With increasing fluencies, a rise in the reverse current of the detectors was observed. These observations are the most probably caused by new lattice defects in the base material or overall detector structure (electrode interfaces, surface) created by neutrons.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"42 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129919909","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of rare-earth elements in the design of radiation detectors and electroluminescent sources 稀土元素在辐射探测器和电致发光光源设计中的作用
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743292
J. Grym, O. Procházková, J. Zavadil, K. Žďánský
{"title":"Role of rare-earth elements in the design of radiation detectors and electroluminescent sources","authors":"J. Grym, O. Procházková, J. Zavadil, K. Žďánský","doi":"10.1109/ASDAM.2008.4743292","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743292","url":null,"abstract":"Rare-earth (RE) elements present in the growth from the liquid phase have purifying effect on III-V semiconductors due to RE's high affinity towards chemical species of shallow impurities. We demonstrate this purifying effect on the preparation of InP-based structures by liquid phase epitaxy with Pr admixture to the growth melt. We employ low temperature photoluminescence, capacitance-voltage and temperature dependent Hall effect measurements to show that optimized concentration of Pr admixture results in the growth of high purity layers of both conductivity types. We discuss the application of p-type InP layers in radiation detectors and InGaAsP layers in electroluminescent sources.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130156063","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New progressive method suitable for the exposure optimization of large and complex defect-free chips direct written by ZBA 21 e-beam tool 适用于zba21电子束直写大型复杂无缺陷芯片曝光优化的渐进式优化方法
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743316
L. Matay, R. Andok, V. Barak, A. Konečníková, I. Kostic, S. Partel, P. Hudek
{"title":"New progressive method suitable for the exposure optimization of large and complex defect-free chips direct written by ZBA 21 e-beam tool","authors":"L. Matay, R. Andok, V. Barak, A. Konečníková, I. Kostic, S. Partel, P. Hudek","doi":"10.1109/ASDAM.2008.4743316","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743316","url":null,"abstract":"The use of a new progressive method suitable for the exposure optimization is investigated for large and complex defect-free chips direct written by ZBA 21 electron beam pattern generator together with all corresponding microprocesses. Well controlled and resolved details (spaces) between individual quasi-square structures of the final large area neural holography chip were achieved in the range of about 50 nm.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127560000","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Contribution of Surface Plasmon-Polaritons and Surface Plasmons into Photocurrent of Schottky Diodes with Corrugated Interface 表面等离子体激元和表面等离子体激元对具有波纹界面的肖特基二极管光电流的贡献
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743369
N. Dmitruk, S. Mamykin, A. Korovin, M. Sosnova
{"title":"Contribution of Surface Plasmon-Polaritons and Surface Plasmons into Photocurrent of Schottky Diodes with Corrugated Interface","authors":"N. Dmitruk, S. Mamykin, A. Korovin, M. Sosnova","doi":"10.1109/ASDAM.2008.4743369","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743369","url":null,"abstract":"The photocurrent of Schottky diodes (Au/GaAs) with different type of interface (diffraction gratings, quasigratings, with Au/SiO2 core-shell nanoparticles) has been studied. Significant contribution of surface plasmon-polaritons and local electromagnetic modes has been shown in all cases by analysis of experimental spectral dependencies of photocurrent and theoretical calculations of light transmittance into semiconductor.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129032260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoelectrical properties of TOS thin films based on TiO2 prepared by modified magnetron sputtering 改性磁控溅射制备TiO2薄膜的光电性能
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743338
D. Wojcieszak, J. Domaradzki, D. Kaczmarek, B. Adamiak
{"title":"Photoelectrical properties of TOS thin films based on TiO2 prepared by modified magnetron sputtering","authors":"D. Wojcieszak, J. Domaradzki, D. Kaczmarek, B. Adamiak","doi":"10.1109/ASDAM.2008.4743338","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743338","url":null,"abstract":"In this work photoelectrical properties of the thin films based on TiO2 have been presented. Thin films were deposited by high energy (HE) magnetron sputtering process. The properties of thin films were modified by doping with Tb and Pd. Structural studies performed with X-ray diffraction measurements, have shown that after deposition rutile phase in TiO2:(Tb, Pd) thin films was received. The results also have shown that examined thin films were nanocrystalline. doping of TiO2-isulating matrix with selected Pd-Tb dopants results in enhanced electrical conductivity of prepared thin films, i.e. oxide-semiconductors with p-type of electrical conduction. Photoelectrical properties of TiO2:(Tb,Pd) thin films were examined by optical beam induced current method. The results of transient photovoltage response to optical excitation have shown that the photovoltage was generated at the active area of prepared TOS-Si heterojunction.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127855335","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bottom collection of photodiode-based CMOS APS 基于光电二极管的CMOS APS底部采集
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743360
B. Blanco-Filgueira, P. López, D. Cabello, J. Ernst, Harald Neubauer, Johann Hauer
{"title":"Bottom collection of photodiode-based CMOS APS","authors":"B. Blanco-Filgueira, P. López, D. Cabello, J. Ernst, Harald Neubauer, Johann Hauer","doi":"10.1109/ASDAM.2008.4743360","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743360","url":null,"abstract":"The market for solid-state image sensors has been experiencing an explosive growth in recent years resulting in CMOS sensors rapidly becoming one of the emerging sectors with more projection potential in the semiconductors industry. A CMOS active pixel sensor (APS) with a reverse biased p-n junction photodiode constitutes the structure of more widespread use, and it has been made a viable alternative to CCDs with the advent of deep submicron CMOS technologies and microlenses. Peripheral area of the junction depletion region plays an important role on collecting photocarriers in the vicinity of photodiode limits. In this paper, the peripheral photoresponse of CMOS APS of different dimensions in a deep submicron 0.18iquestm process is studied, paying special attention to the bottom collection.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115153784","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 8
Reliability issues of AlGaN/GaN heterostructures field-effect transistors AlGaN/GaN异质结构场效应晶体管的可靠性问题
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743329
J. Škriniarová, M. Florovič, J. Kováč, D. Donoval, P. Kordos
{"title":"Reliability issues of AlGaN/GaN heterostructures field-effect transistors","authors":"J. Škriniarová, M. Florovič, J. Kováč, D. Donoval, P. Kordos","doi":"10.1109/ASDAM.2008.4743329","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743329","url":null,"abstract":"Reliability of the AlGaN/GaN HFETs was investigated by applying a short-time (70 min) off-state stress: the drain voltage was 50 V and the channel was pinched off. Significant decrease of the drain current at the stressing conditions was observed. Simultaneously, a decrease of the gate currents was found. On the other hand, the transconductance and threshold voltage did not changed with the stressing time. A modification of the Schottky barrier during the stress is considered to explain this behaviour. Near-surface defects, created during the AlGaN surface preparation before the gate deposition, were suppressed as a result of performed high-electric-field stress.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127432022","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Analysis of the geometry on robustness of ESD protection devices 静电放电保护器件鲁棒性的几何分析
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743301
A. Chvála, D. Donoval, P. Beno, J. Marek, T. Kosik
{"title":"Analysis of the geometry on robustness of ESD protection devices","authors":"A. Chvála, D. Donoval, P. Beno, J. Marek, T. Kosik","doi":"10.1109/ASDAM.2008.4743301","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743301","url":null,"abstract":"The analysis of the ESD protection devices supported by the advanced 2-D and 3-D mixed mode electro-thermal device and circuit simulation is presented. The influence of structure geometry on the electrical properties of ESD devices is studied. The optimization of the structure geometry allows down-shrink of the ESD protection device dimensions with further improvement of its main electrical parameters.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126792698","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor Ga1-xMnxAs稀释磁性半导体的OMVPE生长和表征
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743293
S. Hasenőhrl, M. Kučera, M. Morvic, J. Novák
{"title":"OMVPE growth and characterization of Ga1-xMnxAs diluted magnetic semiconductor","authors":"S. Hasenőhrl, M. Kučera, M. Morvic, J. Novák","doi":"10.1109/ASDAM.2008.4743293","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743293","url":null,"abstract":"A set of Ga<sub>1-x</sub>Mn<sub>x</sub>As epitaxial layers with variable Mn content x<sub>Mn</sub> was prepared using the low-pressure OMVPE. We have studied electrical transport properties and optical characteristics as a function of x<sub>Mn</sub>. Mn atoms are incorporated into the GaAs as an acceptor and at the same time as an electrically neutral centre. The saturation level for doping is 2.2times10<sup>18</sup> cm<sup>-3</sup>. The ternary alloy formation is indicated by photoreflectance measurements and the Mn content in the alloy saturates at 4.1times10<sup>20</sup> cm<sup>-3</sup>.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"52 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127469749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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