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PECVD Silicon Carbon Nitrid Thin Films: Properties PECVD硅碳氮化薄膜:性能
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743340
P. Boháček, J. Huran, A. Kobzev, N. Balalykin, J. Pezoltd
{"title":"PECVD Silicon Carbon Nitrid Thin Films: Properties","authors":"P. Boháček, J. Huran, A. Kobzev, N. Balalykin, J. Pezoltd","doi":"10.1109/ASDAM.2008.4743340","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743340","url":null,"abstract":"Silicon carbon nitride films were grown by the plasma enhanced chemical vapour deposition (PE CVD) technique. The concentration of species in the SiCN films was determined by Rutherford backscattering spectrometry (RBS). Chemical compositions were analyzed by infrared spectroscopy. The hydrogen concentration was determined by the elastic recoil detection (ERD) method. The electrical properties of SiCN films were determined by I-V measurement.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129089412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Edge-emitting laser diode with GaAs triple QW in active region investigated by NOBIC NOBIC研究了有源区GaAs三量子阱的边发射激光二极管
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743325
D. Pudiš, L. Suslik, I. Martincek, J. Kovác, V. Gottschalch
{"title":"Edge-emitting laser diode with GaAs triple QW in active region investigated by NOBIC","authors":"D. Pudiš, L. Suslik, I. Martincek, J. Kovác, V. Gottschalch","doi":"10.1109/ASDAM.2008.4743325","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743325","url":null,"abstract":"The application of near-field imaging to optoelectronic devices and laser diodes provides subwavelength information on a device structure. The fiber tip used for near-field imaging can be used also as a local tunable optical source exciting a photocurrent in the near-field region of an investigated structure. We demonstrate the structure and layer properties of laser diodes based on triple GaAs quantum well structures in AlGaAs active region emitting at wavelength 850 nm. The near-field optical beam induced current analysis is here demonstrated. From the vertical scan across the laser facet the active region with quantum wells and p-, n-doped confinement layers are identified.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131026805","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Reliability aspects of GaN-HEMTs on composite substrates 复合衬底gan - hemt的可靠性方面
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743324
F. Zanon, F. Danesin, A. Tazzoli, M. Meneghini, N. Ronchi, A. Chini, P. Bove, R. Langer, E. Zanoni, G. Meneghesso
{"title":"Reliability aspects of GaN-HEMTs on composite substrates","authors":"F. Zanon, F. Danesin, A. Tazzoli, M. Meneghini, N. Ronchi, A. Chini, P. Bove, R. Langer, E. Zanoni, G. Meneghesso","doi":"10.1109/ASDAM.2008.4743324","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743324","url":null,"abstract":"This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132968100","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Some remarks to the nanowires grown on Ill-V substrate 对在Ill-V衬底上生长纳米线的几点评述
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743320
Á. Nemcsics, E. Horváth, S. Nagy, L. Molnár, I. Mojzes, Z. Horváth
{"title":"Some remarks to the nanowires grown on Ill-V substrate","authors":"Á. Nemcsics, E. Horváth, S. Nagy, L. Molnár, I. Mojzes, Z. Horváth","doi":"10.1109/ASDAM.2008.4743320","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743320","url":null,"abstract":"In the present work nanowires are investigated, which were prepared with the help of encapsulated metal induced growth method on GaAs and InP substrate. As our former investigations show, we can receive nanowires with substrate-like composition in the case of InP. In the case of GaAs substrate the situation is entirely different, while the growth technology in both cases was the same. The difference between the nanoproducts in the cases of different substrates originate in the reactivity of the components, which is explained in the following considerations. Furthermore we have observed that the diameter of the nanowires depends on the electron energy of the irradiation. If the electron beam was 5 kV and 20 kV, the diameter lasting increases and decreases, respectively. This effect can be explained by the change of the nanowires structure influenced by the electron beam.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"152 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130277808","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of the State Machine for A/D Converter A/D转换器状态机的设计
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743309
M. Kubar, J. Jakovenko
{"title":"Design of the State Machine for A/D Converter","authors":"M. Kubar, J. Jakovenko","doi":"10.1109/ASDAM.2008.4743309","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743309","url":null,"abstract":"State machine represent one type of control logic, the very important part of each integrated circuit. There can be situation when analogue designers must design this digital block but they have only a few or even no experience with this kind of design. This paper presents the design of the state machine design for analogue designers. It helps them to design a digital block - when it is simple enough - without need of a digital design tools and helps them to design it fast and without useless mistakes. This design is presented on a real design of the state machine used in a dual-slope A/D converter for RFID devices.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"7 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129192995","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of bulk semi-insulating GaAs radiation detectors: Role of ohmic contact metallization in electrical charge transport and detection performance 块状半绝缘砷化镓辐射探测器的研究:欧姆接触金属化对电荷输运和探测性能的影响
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743341
F. Dubecký, B. Zat’ko, P. Hubík, P. Boháček, E. Gombia, Š. Chromík
{"title":"Study of bulk semi-insulating GaAs radiation detectors: Role of ohmic contact metallization in electrical charge transport and detection performance","authors":"F. Dubecký, B. Zat’ko, P. Hubík, P. Boháček, E. Gombia, Š. Chromík","doi":"10.1109/ASDAM.2008.4743341","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743341","url":null,"abstract":"Current-voltage (I-V) characteristics of radiation detector structures based on semi-insulating (SI) GaAs obtained with new types of metallizations used to form quasi-ohmic contacts are described. Three different metals (In, Gd and Mg), having lower work function in comparison with the standard AuGeNi eutectic alloy, were used. The new contacts form a blocking barrier for holes (\"minority\" carriers in SI GaAs). Such contacts, which could effectively replace standard alloyed N+ \"ohmic\" contact, show an unusual electrical charge transport as deduced from the measured I-V characteristics. Pulse-height spectra of241 Am and 57Co radionuclide sources detected by the structures demonstrating performance ofthe detectors are also reported.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126230653","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Investigation of Ti/Al ohmic contact to N-type 6H-SiC Ti/Al与n型6H-SiC欧姆接触的研究
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743312
P. Machac, B. Barda
{"title":"Investigation of Ti/Al ohmic contact to N-type 6H-SiC","authors":"P. Machac, B. Barda","doi":"10.1109/ASDAM.2008.4743312","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743312","url":null,"abstract":"The presented work describes behavior of contact structures of Ti/Al type on 6H-SiC N-type prepared by the sputtering technology. Optimal annealing temperature is 1065degC, minimal value of the contact resistivity is 4.89times10-4 Omegacm2. The plasma cleaned substrates produce metallizations with better adhesion and frequently with better morphology. The metallizations with 60 nm thickness of Al layer are not applicable. The gradually sputtered metallizations produce ohmic contact structures with better parameters. XPS analysis shows that aluminum leaks out metallization in the vacuum annealing process at higher temperatures.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"41 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126241897","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Hole transport in the p-type RTD p型RTD的空穴输运
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743330
Z. Šobáň, J. Voves, M. Cukr, V. Novák
{"title":"Hole transport in the p-type RTD","authors":"Z. Šobáň, J. Voves, M. Cukr, V. Novák","doi":"10.1109/ASDAM.2008.4743330","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743330","url":null,"abstract":"Results of a RTD structure simulation by means of the nextnano3 [4] are shown. IV curve simulation by means wingreen program [3] and comparison with experimental results are presented in this paper. Our approach is based on the non-equilibrium green's function (NEGF). We used the program Wingreen [3] only with the single band model apart for the heavy and light holes. We summarized the HH and LH transmissivity. The transmissivities and the local density of states are calculated by means of nextnano3 [4] using Contact Block Reduction methodfor the comparison. Our simulations can serve as the relatively fast estimate of the p-type RTD behavior. Our results are verified by the comparison with the experimental data measured on the MBE grown p-type RTD structures. Measured and simulated I-V characteristics for the p-RTD are shown in the Figure.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125297099","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
InAIN/GaN MOSHEMT with Al2O3 insulating film 含Al2O3绝缘膜的InAIN/GaN MOSHEMT
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743365
K. Cico, D. Gregušová, J. Kuzmík, M. di Forte-Poisson, T. Lalinsky, D. Pogany, S. Delage, K. Frohlich
{"title":"InAIN/GaN MOSHEMT with Al2O3 insulating film","authors":"K. Cico, D. Gregušová, J. Kuzmík, M. di Forte-Poisson, T. Lalinsky, D. Pogany, S. Delage, K. Frohlich","doi":"10.1109/ASDAM.2008.4743365","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743365","url":null,"abstract":"In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of the leakage current was about 7 orders of magnitude compared with HEMT structures without the insulating film.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"102 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121770658","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Role of Spacer Thickness on Magnetoresistance Characteristics under Mechanical strain 机械应变下隔层厚度对磁阻特性的影响
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743339
B. Anwarzai, V. Áč, S. Luby, E. Majková, R. Senderák
{"title":"Role of Spacer Thickness on Magnetoresistance Characteristics under Mechanical strain","authors":"B. Anwarzai, V. Áč, S. Luby, E. Majková, R. Senderák","doi":"10.1109/ASDAM.2008.4743339","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743339","url":null,"abstract":"Nowadays the GMR research moved into new areas by combining GMR ferromagnetic layers with materials exhibiting magnetostriction phenomena. If the sense layer of SV (spin valve) is substituted by magnetostrictive material, the magnetoresistance structure is influenced by the applied tensile or compressive stress through the magnetization orientation in magnetostrictive material. Using such effect, the sensor of mechanical quantities can be constructed. For SV applications as a mechanical sensor more flexible substrate is needed. In this paper is studied role of SV spacer thickness on magnetoresistance characteristics under mechanical load. The magnetoresistance was measured in Co-Au-Co core structure with spacer thickness in range of 2.2 - 4 nm deposited on plastic substrate. Magnetoresistance dependency vs. applied strain was measured in bending configuration. Various types of characteristics were observed in dependence of spacer thickness. These properties are studied in connection with oscillatory character of antiferromagnetic exchange coupling forces which was in good correlation with our experimental results.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"479 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133604936","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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