复合衬底gan - hemt的可靠性方面

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743324

F. Zanon, F. Danesin, A. Tazzoli, M. Meneghini, N. Ronchi, A. Chini, P. Bove, R. Langer, E. Zanoni, G. Meneghesso

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引用次数: 0

摘要

本文展示了在复合衬底上生长的外延层上加工的AlGaN/GaN hemt的电学特性和可靠性分析。这一结果为无线通信系统中低成本高功率微波晶体管的制造提供了良好的前景。由于期望有更好的热性能，复合衬底构成了硅的有价值的替代品。

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Reliability aspects of GaN-HEMTs on composite substrates

This paper shows electrical characterizations and reliability analysis performed on AlGaN/GaN HEMTs processed on epitaxial layers grown on composite substrates. The results are very promising for the fabrication of low cost high power microwave transistors for wireless communication systems. The composite substrates constitute a valuable alternative to the silicon since better thermal properties are expected.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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