Ti/Al与n型6H-SiC欧姆接触的研究

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743312

P. Machac, B. Barda

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引用次数: 0

摘要

本文描述了Ti/Al型接触结构在溅射制备的6H-SiC n型表面的行为。最佳退火温度为1065℃，接触电阻率最小值为4.89倍10-4 Omegacm2。等离子体清洗的基板产生的金属化具有更好的附着力和更好的形貌。铝层厚度为60nm的金属化不适用。逐渐溅射的金属化过程产生了具有较好参数的欧姆接触结构。XPS分析表明，铝在高温真空退火过程中漏出金属化。

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Investigation of Ti/Al ohmic contact to N-type 6H-SiC

The presented work describes behavior of contact structures of Ti/Al type on 6H-SiC N-type prepared by the sputtering technology. Optimal annealing temperature is 1065degC, minimal value of the contact resistivity is 4.89times10-4 Omegacm2. The plasma cleaned substrates produce metallizations with better adhesion and frequently with better morphology. The metallizations with 60 nm thickness of Al layer are not applicable. The gradually sputtered metallizations produce ohmic contact structures with better parameters. XPS analysis shows that aluminum leaks out metallization in the vacuum annealing process at higher temperatures.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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