InAIN/GaN MOSHEMT with Al2O3 insulating film

Abstract

In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of the leakage current was about 7 orders of magnitude compared with HEMT structures without the insulating film.