{"title":"Influence of annealing on electrical properties of AlGaN/GaN HFETs and MOSHFETs using A12O3","authors":"R. Stoklas, D. Gregušová, J. Novák, P. Kordos","doi":"10.1109/ASDAM.2008.4743333","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743333","url":null,"abstract":"Thermal annealing was used to investigate traps at the surface of AlGaN/GaN HFETs and Al2O3/AIGaN/GaN MOSHFETs. The C-V and static output and transfer measurement yielded nearly identical characteristics for unannealed and annealed structures, regardless whether unpassivated or gate-oxide structures were used. A strong influence of the annealing on the gate leakage current was observed. The leakage currents were lowered by about two orders of magnitude, which is indicative of an efficient reduction of traps in the AlGaN/GaN heterostructure because of annealing.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132874190","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
G. Vanko, T. Lalinsky, M. Tomáška, S. Hascik, Z. Mozolova, J. Škriniarová, I. Kostic, A. Vincze, F. Uherek
{"title":"Impact of SF6 Plasma on DC and Microwave Performance of AIGaN/GaN HEMT Structures","authors":"G. Vanko, T. Lalinsky, M. Tomáška, S. Hascik, Z. Mozolova, J. Škriniarová, I. Kostic, A. Vincze, F. Uherek","doi":"10.1109/ASDAM.2008.4743352","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743352","url":null,"abstract":"The improved dc and microwave properties of 2 mum gate length AlGaN/GaN based HEMT structures were observed after applying of a novel approach in the forming of the Schottky gate interface. The new approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with \"in-situ\" SF6 surface plasma treatment under Schottky gate. A significant improvement in both the current gain cut-off frequency (ft) and maximum oscillation frequency (fmax) were demonstrated. The exact mechanism to explain the improved performance of the SF6 plasma treated HEMTs is in progress. A great potential of the approach for sub-micrometer gate length technology of HEMTs is also emphasized.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114614622","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Temperature Wireless Sensor Network","authors":"M. Husák, J. Jakovenko, T. Vitek","doi":"10.1109/ASDAM.2008.4743298","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743298","url":null,"abstract":"The system was designed for sensor measurement and data transfer. A new architecture of a multisensor system for temperature measurement using wireless communications was used in the paper. There are used sensors with digital or analog outputs [1]. The control software of the system has been created. Different software were designed for wireless units. The integrated RF chip nRF9E5 was used as wireless units. Chip ensures wireless communication between control unit and sensors as well as wireless switch unit. The control unit controls system operation, i.e. communication, sensor data processing as well as work of actuator unit. Communication is ensured in the range of 300 m in the free space. The system was designed to operate with different type of sensors. The number of sensor can be variable. The system can used PC, PDA or mobile phone to communication with control unit [2].","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114293620","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous
{"title":"Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT","authors":"B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous","doi":"10.1109/ASDAM.2008.4743362","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743362","url":null,"abstract":"Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116229446","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
A. Maric, G. Radosavljevic, M. Zivanov, L. Zivanov, G. Stojanović, M. Mayer, A. Jachimowicz, F. Keplinger
{"title":"Modelling and Characterisation of Fractal Based RF Inductors on Silicon Substrate","authors":"A. Maric, G. Radosavljevic, M. Zivanov, L. Zivanov, G. Stojanović, M. Mayer, A. Jachimowicz, F. Keplinger","doi":"10.1109/ASDAM.2008.4743314","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743314","url":null,"abstract":"This paper offers a new realisation of a lumped element model for the second order Hilbert type fractal inductor on silicon substrate. Modelled elements are derived and analytically determined from the inductors layout specifications and available materials parameters. Based on the presented concept, frequency dependent characteristics for fractals inductance and quality factor (Q-factor) can be anticipated easily and with acceptable tolerances. In order to verify the accuracy of the presented model obtained parameters have been compared with experimentally attained values. Determined model parameters show satisfactory compliance with electrical parameters attained through experimental measurement, for frequencies in lower RF range (up to 10 GHz).","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"52 3-4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123519316","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
{"title":"Localised etching of (100) GaAs via an AlAs sacrificial layer","authors":"P. Eliáš, I. Kostic, R. Kúdela, J. Novák","doi":"10.1109/ASDAM.2008.4743343","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743343","url":null,"abstract":"(100) GaAs substrate was patterned in 7H3PO4 (85% w/w):7H2O2 (30% w/w): IODI H2O via an etching mask with dynamic edges. The mask consisted of a resist layer, a Ti layer, a GaAs top layer, and an AlAs sacrificial layer. [0-11]-oriented stripe patterns were defined in the resist and Ti layers. At first, the top GaAs layer was etched via the resist /Ti mask. Once the solution cut via the AlAs layer, the underlying GaAs began to be locally etched at laterally moving [0-11]-oriented edges of the AlAs layer that was etched concurrently. Mesas and ridges confined to side facets tilted at about 30deg were produced through such laterally changing mask patterns.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127009592","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
K. Kalna, Asen Asenov, J. S. Ayubi-Moak, A. Craven, Ravi Droopad, R. Hill, M. Holland, Xu Li, A. R. Long, Paolo Longo, D. Macintyre, M. Passlack, G. Paterson, C. R. Stanley, S. Thoms, Haiping Zhou, I. Thayne
{"title":"III-V MOSFETs for Digital Applications with Silicon Co-Integration","authors":"K. Kalna, Asen Asenov, J. S. Ayubi-Moak, A. Craven, Ravi Droopad, R. Hill, M. Holland, Xu Li, A. R. Long, Paolo Longo, D. Macintyre, M. Passlack, G. Paterson, C. R. Stanley, S. Thoms, Haiping Zhou, I. Thayne","doi":"10.1109/ASDAM.2008.4743354","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743354","url":null,"abstract":"The prospect for the introduction of III-V semiconductors into the channel of n-type MOSFETs and thus replace Si with a high mobility material for 22 nm technology generation and beyond is examined in detail. The so-called implantfree (IF) III-V MOSFET architecture option is presented showing a fabricated n-type IF demonstrator suitable for scaling. We then focus on a prediction of the potential performance of III-V MOSFETs through physically-based Monte Carlo (MC) device simulations. An implanted, n-type III-V MOSFETs based on In0.3Ga0.7As channel is investigated when scaled from a gate length of 30 nm to 20 nm and 15 nm. The impact of decisive scattering mechanisms operative at the dielectric/semiconductor interface is discussed. We also simulate the IF devices with low (In0.3Ga0.7As) and high (In0.75Ga0.25As) Indium content channel scaled to gate lengths of 30, 20 and 15 nm with equivalent layer thicknesses. The IF architecture is found to deliver a high drive current because of the highly efficient injection of electrons into the channel and because of very low access resistances. However, the low Indium content channel IF transistor is not able to further increase its drive current when scaled to the 15 nm gate length. Therefore, we examine also the performance of high indium channel transistors which delivers a steady increase in the device performance down to the 15 nm gate length.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131313961","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}