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2008 International Conference on Advanced Semiconductor Devices and Microsystems最新文献

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Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chip 半绝缘砷化镓辐射探测器耦合到多通道ASIC DX64读出芯片的初步测试
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743353
B. Zat’ko, F. Dubecký, P. Scepko, P. Grybos, J. Mudroň
{"title":"Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chip","authors":"B. Zat’ko, F. Dubecký, P. Scepko, P. Grybos, J. Mudroň","doi":"10.1109/ASDAM.2008.4743353","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743353","url":null,"abstract":"This work deals with the performance of semi-insulating GaAs-based detectors of ionizing radiation DC-coupled to the multichannel readout chip ASIC DX64. Fabricated detectors have circular Ti/Pt/Au Schottky blocking contact with four different diameters and full area AuGeNi eutectic alloy quasi-ohmic contact on the opposite site. The current-voltage characteristics and 241Am pulse-height spectra of the detectors were measured and evaluated. It is demonstrated that the system allows operation in single photon counting regime applicable in new generation \"quantum\" and digital X-ray imaging and foreseen energy separation so called \"colour\" imaging applications.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"54 3-4","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"120903970","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Surface control structures for high-performance AlGaN/GaN HEMTs 高性能AlGaN/GaN hemt的表面控制结构
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743308
T. Hashizume
{"title":"Surface control structures for high-performance AlGaN/GaN HEMTs","authors":"T. Hashizume","doi":"10.1109/ASDAM.2008.4743308","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743308","url":null,"abstract":"Highly stable and reliable operation is absolutely required for GaN-based high-efficiency power switching devices and high-power RF AlGaN/GaN HEMTs. For the improvement of operation stability in such devices, in this paper, the surface control technologies will be addressed by introducing an ultrathin-Al-layer process, an electrochemical oxidation and a multi-mesa-channel structure with relevant technologies.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121445518","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique 扩散法制备硅p-n结的DLTS光谱解释
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743304
D. Kindl, P. Hubík, J. Mares, J. Kristofik
{"title":"Interpretation of the DLTS spectra of silicon p-n junctions prepared by diffusion technique","authors":"D. Kindl, P. Hubík, J. Mares, J. Kristofik","doi":"10.1109/ASDAM.2008.4743304","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743304","url":null,"abstract":"Deep level transient spectroscopy (DLTS) measurements were carried out on silicon diodes prepared by Al-diffusion into n-type material. The main purpose of the experiments was to test our theory concerning the possibility of unambiguous interpretation of the DLTS spectrum. A simple method of correct assignment of the observed traps to either side of the junction is outlined. Using this method based on the dependence of normalized DLTS peak amplitude on the reverse bias, two electron traps and two hole traps were recognized in tested samples. At least three of these traps are probably related to quenched-in defects.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"77 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115216291","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Low equivalent oxide thickness metal/insulator/metal structures for DRAM application 用于DRAM应用的低等效氧化厚度金属/绝缘体/金属结构
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743296
B. Hudec, M. Ťapajna, K. Hušeková, J. Aarik, A. Aidla, K. Frohlich
{"title":"Low equivalent oxide thickness metal/insulator/metal structures for DRAM application","authors":"B. Hudec, M. Ťapajna, K. Hušeková, J. Aarik, A. Aidla, K. Frohlich","doi":"10.1109/ASDAM.2008.4743296","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743296","url":null,"abstract":"We have prepared metal/insulator/metal (MIM) structures with RuO<sub>2</sub> bottom electrode and TiO<sub>2</sub> dielectric film for advanced dynamic random access memory (DRAM) technology. RuO<sub>2</sub> films were grown by metal organic chemical vapour deposition while TiO<sub>2</sub> films were prepared by atomic layer deposition. RuO<sub>2</sub> bottom electrode crystallizes in rutile structure and induces growth of rutile TiO<sub>2</sub>. Equivalent oxide thickness (EOT) as low as 0.39 nm and dielectric constant as high as 130 was obtained. It was found that leakage current strongly depends on either oxygen treatment after deposition or its admixture to the carrier gas during TiO<sub>2</sub> deposition. However, MIM structures under study show higher leakage current that is expected for the application (~10<sup>-7</sup> A/cm<sup>2</sup>) in DRAM technology.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"14 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131441410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of Eu, Tb, Pd dopants on electrical and optical properties of nanostructured TiO2 thin films Eu、Tb、Pd掺杂物对纳米TiO2薄膜电学和光学性能的影响
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743328
K. Sieradzka, J. Domaradzki, D. Kaczmarek
{"title":"Influence of Eu, Tb, Pd dopants on electrical and optical properties of nanostructured TiO2 thin films","authors":"K. Sieradzka, J. Domaradzki, D. Kaczmarek","doi":"10.1109/ASDAM.2008.4743328","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743328","url":null,"abstract":"Present work is concentrating on TiO2 thin films doped with Pd, Eu and Pd, Tb and Pd. From comparison of undoped TiO2 with the prepared thin films it has been concluded that doping with Pd gets worse transparency in analysed films and the fundamental absorption edge was shifted to the longer wavelength range. The electrical properties were studied by thermoelectrical measurements. The lowest resistivity, was recorded for the thin films doped with Pd at the amount of 23 at. % and it was equal nearly to 10-3 Omegacm. Moreover, as it was shown by Seebeck coefficient, doping with selected elements results in different type of electrical conduction. To confirm that investigated thin films can form heterojunction with silicon, structures were examined by current to voltage (I-V) curves.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"143 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131458704","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and Simulation 基于三维建模与仿真的内置电流传感器新型磁场效应晶体管结构分析
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743347
J. Marek, D. Donoval, M. Donoval, M. Daricek
{"title":"Analysis of Novel MagFET Structures for Built-in Current Sensors Supported by 3D Modeling and Simulation","authors":"J. Marek, D. Donoval, M. Donoval, M. Daricek","doi":"10.1109/ASDAM.2008.4743347","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743347","url":null,"abstract":"Novel built-in current sensor structures based on selected electrophysical properties of a magnetic FET (MAGFET) is presented. The proposed sensor structures may be used for on-chip current testing in deep-submicron circuits with ultra low-voltage power supply. Their advantage is mainly in elimination of the undesired supply voltage reduction on the current monitor, commonly created by standard current test methods. Analysis of the influence of various device structures and dimensions on their electro-physical parameters and electrical characteristics is presented. All versions of MAGFET structure were designed using design rules of 1mum BiCMOS technology.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"116 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124134755","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs 应变InGaAs/InAlAs pHEMTs中扭结效应的物理模拟
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743357
S. Arshad, M. Mohiuddin, A. Bouloukou, M. Missous
{"title":"Physical Modelling of the Kink Effect in Strained InGaAs/InAlAs pHEMTs","authors":"S. Arshad, M. Mohiuddin, A. Bouloukou, M. Missous","doi":"10.1109/ASDAM.2008.4743357","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743357","url":null,"abstract":"The InAlAs/InGaAs material system provides one of the highest transconductance pHEMT devices at a given gate size because of its large conduction band discontinuity, high electron mobility and very good carrier confinement in the channel. The DC characteristics, however, show a sudden rise in drain current at fixed value of drain voltage, resulting in high drain conductance and reduced voltage gain. This undesirable phenomenon is called Kink Effect. In this work a comprehensive understanding of the causes of this effect is developed using a 2-D physical device simulator. The modelled pHEMT is a layered structure that simulates the epitaxial layers of the fabricated device grown by MBE[1]. The developed model takes into account field dependent mobility, generation recombination mechanisms and deep-level traps are used. With the help of these physical models, threshold voltage, drain saturation and gate leakage current are successfully simulated and agree well with the measured results.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125431474","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
ID-array of metallic nanowires as sensing element for optical sensor: modeling and characterization 作为光学传感器传感元件的金属纳米线id阵列:建模与表征
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743368
N. Dmitruk, O. I. Mayeva, A. Korovin, S. Mamykin, M. Sosnova, V. I. Min’ko
{"title":"ID-array of metallic nanowires as sensing element for optical sensor: modeling and characterization","authors":"N. Dmitruk, O. I. Mayeva, A. Korovin, S. Mamykin, M. Sosnova, V. I. Min’ko","doi":"10.1109/ASDAM.2008.4743368","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743368","url":null,"abstract":"The performance of ID-array of metallic nanowires for chemical sensing application is studied theoretically and experimentally. The calculations of the interaction of the incident light with the periodic system of nanowires are based on the differential formalism using curvilinear coordinate transformation. The influence of ensemble geometrical characteristic on system sensitivity was predicted. The shift of resonance curve due to change of system environment was observed experimentally.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"16 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127445920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Graphene-like Silicon Nano-ribbons on the Silver (110) Surface 银(110)表面的类石墨烯硅纳米带
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743366
M. E. Dávila, C. Leandri, A. Kara, B. Ealet, P. De Padova, B. Aufray, G. Le Lay
{"title":"Graphene-like Silicon Nano-ribbons on the Silver (110) Surface","authors":"M. E. Dávila, C. Leandri, A. Kara, B. Ealet, P. De Padova, B. Aufray, G. Le Lay","doi":"10.1109/ASDAM.2008.4743366","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743366","url":null,"abstract":"Silicene, a monolayer of silicon atoms packed into a two-dimensional honeycomb lattice is the challenging hypothetical reflection in the silicon realm of graphene, a one-atom thick graphite sheet, presently the hottest new material in condensed matter physics and nanotechnology. If existing, it would also reveal a cornucopia of new physics and potential applications. Here, we reveal the catalytic growth of graphene-like silicon nano-ribbons self-aligned in a massively parallel array on the anisotropic Ag(110) surface. We compare with one-dimensional (1D) structures formed, more classically, the other way around, upon depositing gold or silver on the silicon (111) surface. Finally, we envisage wide ranging applications for these novel silicene stripes.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127597390","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs 用于宽带(300MHz至2GHz) LNAs的低漏InGaAs/InAlAs phemt设计
2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI: 10.1109/ASDAM.2008.4743363
A. Bouloukou, B. Boudjelida, A. Sobih, S. Boulay, J. Sly, M. Missous
{"title":"Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs","authors":"A. Bouloukou, B. Boudjelida, A. Sobih, S. Boulay, J. Sly, M. Missous","doi":"10.1109/ASDAM.2008.4743363","DOIUrl":"https://doi.org/10.1109/ASDAM.2008.4743363","url":null,"abstract":"This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 muA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"30 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131449197","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 10
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