半绝缘砷化镓辐射探测器耦合到多通道ASIC DX64读出芯片的初步测试

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743353

B. Zat’ko, F. Dubecký, P. Scepko, P. Grybos, J. Mudroň

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引用次数: 0

摘要

本文研究了耦合到多通道读出芯片ASIC DX64的半绝缘电离辐射直流gaas探测器的性能。制备的探测器具有四种不同直径的圆形Ti/Pt/Au肖特基阻塞接触和相反位置的全面积AuGeNi共晶合金准欧姆接触。测量并评价了探测器的电流-电压特性和241Am脉冲高度谱。实验证明，该系统可以在单光子计数系统中运行，适用于新一代“量子”和数字x射线成像以及可预见的能量分离，即所谓的“彩色”成像应用。

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Preliminary tests of semi-insulating GaAs radiation detectors coupled to the multichannel ASIC DX64 readout chip

This work deals with the performance of semi-insulating GaAs-based detectors of ionizing radiation DC-coupled to the multichannel readout chip ASIC DX64. Fabricated detectors have circular Ti/Pt/Au Schottky blocking contact with four different diameters and full area AuGeNi eutectic alloy quasi-ohmic contact on the opposite site. The current-voltage characteristics and 241Am pulse-height spectra of the detectors were measured and evaluated. It is demonstrated that the system allows operation in single photon counting regime applicable in new generation "quantum" and digital X-ray imaging and foreseen energy separation so called "colour" imaging applications.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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