{"title":"Influence of Eu, Tb, Pd dopants on electrical and optical properties of nanostructured TiO2 thin films","authors":"K. Sieradzka, J. Domaradzki, D. Kaczmarek","doi":"10.1109/ASDAM.2008.4743328","DOIUrl":null,"url":null,"abstract":"Present work is concentrating on TiO2 thin films doped with Pd, Eu and Pd, Tb and Pd. From comparison of undoped TiO2 with the prepared thin films it has been concluded that doping with Pd gets worse transparency in analysed films and the fundamental absorption edge was shifted to the longer wavelength range. The electrical properties were studied by thermoelectrical measurements. The lowest resistivity, was recorded for the thin films doped with Pd at the amount of 23 at. % and it was equal nearly to 10-3 Omegacm. Moreover, as it was shown by Seebeck coefficient, doping with selected elements results in different type of electrical conduction. To confirm that investigated thin films can form heterojunction with silicon, structures were examined by current to voltage (I-V) curves.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"143 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743328","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Present work is concentrating on TiO2 thin films doped with Pd, Eu and Pd, Tb and Pd. From comparison of undoped TiO2 with the prepared thin films it has been concluded that doping with Pd gets worse transparency in analysed films and the fundamental absorption edge was shifted to the longer wavelength range. The electrical properties were studied by thermoelectrical measurements. The lowest resistivity, was recorded for the thin films doped with Pd at the amount of 23 at. % and it was equal nearly to 10-3 Omegacm. Moreover, as it was shown by Seebeck coefficient, doping with selected elements results in different type of electrical conduction. To confirm that investigated thin films can form heterojunction with silicon, structures were examined by current to voltage (I-V) curves.