Eu、Tb、Pd掺杂物对纳米TiO2薄膜电学和光学性能的影响

K. Sieradzka, J. Domaradzki, D. Kaczmarek
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引用次数: 2

摘要

目前的研究主要集中在掺杂Pd、Eu和Pd、Tb和Pd的TiO2薄膜上。将未掺杂的TiO2与制备的薄膜进行对比,发现掺杂Pd使薄膜的透明度变差,基本吸收边向更长的波长范围偏移。通过热电测量对其电性能进行了研究。当Pd掺杂量为23 at时,薄膜的电阻率最低。它几乎等于10-3。此外,正如塞贝克系数所示,掺杂选定的元素会导致不同类型的导电。为了证实所研究的薄膜可以与硅形成异质结,通过电流-电压(I-V)曲线对其结构进行了检测。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Influence of Eu, Tb, Pd dopants on electrical and optical properties of nanostructured TiO2 thin films
Present work is concentrating on TiO2 thin films doped with Pd, Eu and Pd, Tb and Pd. From comparison of undoped TiO2 with the prepared thin films it has been concluded that doping with Pd gets worse transparency in analysed films and the fundamental absorption edge was shifted to the longer wavelength range. The electrical properties were studied by thermoelectrical measurements. The lowest resistivity, was recorded for the thin films doped with Pd at the amount of 23 at. % and it was equal nearly to 10-3 Omegacm. Moreover, as it was shown by Seebeck coefficient, doping with selected elements results in different type of electrical conduction. To confirm that investigated thin films can form heterojunction with silicon, structures were examined by current to voltage (I-V) curves.
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