用于宽带(300MHz至2GHz) LNAs的低漏InGaAs/InAlAs phemt设计

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743363

A. Bouloukou, B. Boudjelida, A. Sobih, S. Boulay, J. Sly, M. Missous

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引用次数: 10

摘要

本文介绍了适用于低频LNA设计的InGaAs-InAlAs pHEMTs的设计、制造和表征。在供电层厚度或铟浓度变化的晶体管被设计为提供一系列的传输特性。这些phemt具有非常低的泄漏水平，约为0.2 muA/mm，可以实现大几何形状、低噪声的器件。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Design of low leakage InGaAs/InAlAs pHEMTs for wide band (300MHz to 2GHz) LNAs

This paper presents the design, fabrication and characterisation of InGaAs-InAlAs pHEMTs suitable for low frequency LNA designs. Transistors with variations in the supply layer thickness or indium concentration are designed to provide for a range of transfer characteristics. Very low levels of leakage, of order of 0.2 muA/mm, are demonstrated by these pHEMTs, which enables the implementation of large-geometry, low-noise devices.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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