采用新型InGaAs/InAlAs/InP pHEMT的0.5 dB以下NF宽带低噪声放大器

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743362

B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous

{"title":"采用新型InGaAs/InAlAs/InP pHEMT的0.5 dB以下NF宽带低噪声放大器","authors":"B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous","doi":"10.1109/ASDAM.2008.4743362","DOIUrl":null,"url":null,"abstract":"Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":"{\"title\":\"Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT\",\"authors\":\"B. Boudjelida, A. Sobih, S. Arshad, A. Bouloukou, S. Boulay, J. Sly, M. Missous\",\"doi\":\"10.1109/ASDAM.2008.4743362\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.\",\"PeriodicalId\":306699,\"journal\":{\"name\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":\"12 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"8\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2008.4743362\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743362","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 8

摘要

利用新型超低噪声InGaAs/InAlAs phemt的线性和非线性建模，设计了工作频率为0.3至2 GHz的低噪声放大器。LNA在整个频带具有~ 0.4 dB的NF，在1.4 GHz时功率增益为26 dB, IP3为14 dBm，使其成为平方公里阵列(SKA)望远镜、GSM、GPS、民用和军用DAB的孔径阵列概念的良好候选者。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Sub-0.5 dB NF broadband low-noise amplifier using a novel InGaAs/InAlAs/InP pHEMT

Linear and non-linear modelling of a novel ultra-low noise InGaAs/InAlAs pHEMTs have been used to design a low noise amplifier operating from 0.3 to 2 GHz. The LNA has ~ 0.4 dB NF across the whole frequency band, power gain of 26 dB at 1.4 GHz and IP3 of 14 dBm, making it a good candidate for the aperture array concept of the Square Kilometre Array (SKA) telescope, GSM, GPS, civil and military DAB.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2008 International Conference on Advanced Semiconductor Devices and Microsystems

自引率

0.00%

发文量