SF6等离子体对AIGaN/GaN HEMT结构直流和微波性能的影响

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743352

G. Vanko, T. Lalinsky, M. Tomáška, S. Hascik, Z. Mozolova, J. Škriniarová, I. Kostic, A. Vincze, F. Uherek

{"title":"SF6等离子体对AIGaN/GaN HEMT结构直流和微波性能的影响","authors":"G. Vanko, T. Lalinsky, M. Tomáška, S. Hascik, Z. Mozolova, J. Škriniarová, I. Kostic, A. Vincze, F. Uherek","doi":"10.1109/ASDAM.2008.4743352","DOIUrl":null,"url":null,"abstract":"The improved dc and microwave properties of 2 mum gate length AlGaN/GaN based HEMT structures were observed after applying of a novel approach in the forming of the Schottky gate interface. The new approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with \"in-situ\" SF6 surface plasma treatment under Schottky gate. A significant improvement in both the current gain cut-off frequency (ft) and maximum oscillation frequency (fmax) were demonstrated. The exact mechanism to explain the improved performance of the SF6 plasma treated HEMTs is in progress. A great potential of the approach for sub-micrometer gate length technology of HEMTs is also emphasized.","PeriodicalId":306699,"journal":{"name":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","volume":"21 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Impact of SF6 Plasma on DC and Microwave Performance of AIGaN/GaN HEMT Structures\",\"authors\":\"G. Vanko, T. Lalinsky, M. Tomáška, S. Hascik, Z. Mozolova, J. Škriniarová, I. Kostic, A. Vincze, F. Uherek\",\"doi\":\"10.1109/ASDAM.2008.4743352\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The improved dc and microwave properties of 2 mum gate length AlGaN/GaN based HEMT structures were observed after applying of a novel approach in the forming of the Schottky gate interface. The new approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with \\\"in-situ\\\" SF6 surface plasma treatment under Schottky gate. A significant improvement in both the current gain cut-off frequency (ft) and maximum oscillation frequency (fmax) were demonstrated. The exact mechanism to explain the improved performance of the SF6 plasma treated HEMTs is in progress. A great potential of the approach for sub-micrometer gate length technology of HEMTs is also emphasized.\",\"PeriodicalId\":306699,\"journal\":{\"name\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"volume\":\"21 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2008-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2008 International Conference on Advanced Semiconductor Devices and Microsystems\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.2008.4743352\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2008 International Conference on Advanced Semiconductor Devices and Microsystems","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2008.4743352","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

采用一种新的方法形成肖特基栅界面后，观察到2 mum栅极长度AlGaN/GaN基HEMT结构的直流和微波性能得到改善。新方法采用浅层凹栅等离子体蚀刻AlGaN势垒层，结合Schottky栅极下的原位SF6表面等离子体处理。在电流增益截止频率(ft)和最大振荡频率(fmax)方面都有显著的改进。SF6等离子体处理的hemt性能改善的确切机制尚在研究中。强调了亚微米栅极长度hemt技术的巨大潜力。

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Impact of SF6 Plasma on DC and Microwave Performance of AIGaN/GaN HEMT Structures

The improved dc and microwave properties of 2 mum gate length AlGaN/GaN based HEMT structures were observed after applying of a novel approach in the forming of the Schottky gate interface. The new approach uses a shallow recess-gate plasma etching of AlGaN barrier layer in combination with "in-situ" SF6 surface plasma treatment under Schottky gate. A significant improvement in both the current gain cut-off frequency (ft) and maximum oscillation frequency (fmax) were demonstrated. The exact mechanism to explain the improved performance of the SF6 plasma treated HEMTs is in progress. A great potential of the approach for sub-micrometer gate length technology of HEMTs is also emphasized.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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