含Al2O3绝缘膜的InAIN/GaN MOSHEMT

2008 International Conference on Advanced Semiconductor Devices and Microsystems Pub Date : 2008-10-01 DOI:10.1109/ASDAM.2008.4743365

K. Cico, D. Gregušová, J. Kuzmík, M. di Forte-Poisson, T. Lalinsky, D. Pogany, S. Delage, K. Frohlich

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引用次数: 0

摘要

在本文中，我们研究了快速热退火(RTA)对Al2O3绝缘膜ain /GaN MOSHEMT电性能的影响。在样本上，我们测量了输入、输出和脉冲特性。因此，确定了阈值电压和外部跨导。在700℃退火后观察到RTA的影响更为显著。在这种情况下，与没有绝缘膜的HEMT结构相比，泄漏电流降低了约7个数量级。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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InAIN/GaN MOSHEMT with Al2O3 insulating film

In this article, we investigate the effect of a rapid thermal annealing (RTA) on electrical properties InAIN/GaN MOSHEMT with Al2O3 insulating film. On samples, we measured input, output and pulse characteristics. Consequently, a threshold voltage and an extrinsic transconductance was determined. A more dramatic influence of RTA was observed after annealing at 700degC. In this case, a reduction of the leakage current was about 7 orders of magnitude compared with HEMT structures without the insulating film.

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2008 International Conference on Advanced Semiconductor Devices and Microsystems

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